Method for fabrication of a semiconductor device and structure

ABSTRACT

A configurable integrated circuit (IC) system comprising: a first die comprising input/output cells; and a configurable logic second die connected by a first plurality of through-silicon-vias (TSVs) to the first die.

CROSS-REFERENCE OF RELATED APPLICATION

This application claims priority of co-pending U.S. patent applicationSer. No. 12/577,532, the contents of which are incorporated byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Various embodiments of the present invention may relate to configurablelogic arrays and/or fabrication methods for a Field Programmable LogicArray—FPGA.

2. Discussion of Background Art

Semiconductor manufacturing is known to improve device density in anexponential manner over time, but such improvements do come with aprice. The mask set cost required for each new process technology hasbeen increasing exponentially. So while 20 years ago a mask set costless than $20,000 it is now quite common to be charged more than $1M fortoday's state of the art device mask set.

These changes represent an increasing challenge primarily to customproducts, which tend to target smaller volume and less diverse marketstherefore making the increased cost of product development very hard toaccommodate.

Custom Integrated Circuits can be segmented into two groups. The firstgroup includes devices that have all their layers custom made. Thesecond group includes devices that have at least some generic layersused across different custom products. Well-known examples of the secondkind are Gate Arrays, which use generic layers for all layers up tocontact layer, and FPGAs, which utilize generic layers for all of theirlayers. The generic layers in such devices are mostly a repeatingpattern structure in array form.

The logic array technology is based on a generic fabric that iscustomized for a specific design during the customization stage. For anFPGA the customization is done through programming by electricalsignals. For Gate Arrays, which in their modern form are sometimescalled Structured ASICs, the customization is by at least one customlayer, which might be done with Direct Write eBeam or with a custommask. As designs tend to be highly variable in the amount of logic andmemory and type of I/O each one needs, vendors of logic arrays createproduct families with a number of Master Slices covering a range oflogic, memory size and I/O options. Yet, it is always a challenge tocome up with minimum set of Master Slices that will provide a good fitfor the maximal number of designs because it is quite costly if adedicated mask set is required for each Master Slice.

U.S. Pat. No. 4,733,288 issued to Sato Shinji Sato in March 1988,discloses a method “to provide a gate-array LSI chip which can be cutinto a plurality of chips, each of the chips having a desired size and adesired number of gates in accordance with a circuit design.” The priorart in the references cited present few alternative methods to utilize ageneric structure for different sizes of custom devices.

The array structure fits the objective of variable sizing. Thedifficulty to provide variable-sized array structure devices is due tothe need of providing I/O cells and associated pads to connect thedevice to the package. To overcome this limitation Sato suggests amethod where I/O could be constructed from the transistors that are alsoused for the general logic gates. Anderson also suggested a similarapproach. U.S. Pat. No. 5,217,916 issued to Anderson et al. on Jun. 8,1993, discloses a configurable gate array free of predefinedboundaries—borderless—using transistor gate cells, of the same type ofcells used for logic, to serve the input and output function.Accordingly, the input and output functions may be placed to surroundthe logic array sized for the specific application. This method places asevere limitation on the I/O cell to use the same type of transistors asused for the logic and; hence, would not allow the use of higheroperating voltages for the I/O.

U.S. Pat. No. 7,105,871 issued to Or-Bach, et al. Sep. 12, 2006,discloses a semiconductor device that includes a borderless logic arrayand area I/Os. The logic array may comprise a repeating core, and atleast one of the area I/Os may be a configurable I/O.

In the past it was reasonable to design an I/O cell that could beconfigured to the various needs of most customers. The ever increasingneed of higher data transfer rate in and out of the device drove thedevelopment of special I/O circuits called SerDes. These circuits arecomplex and require a far larger silicon area than conventional I/Os.Consequently, the variations needed are combinations of various amountsof logic, various amounts and types of memories, and various amounts andtypes of I/O. This implies that even the use of the borderless logicarray of the prior art will still require multiple expensive mask sets.

The most common FPGAs in the market today are based on SRAM as theprogramming element. Floating-Gate Flash programmable elements are alsoutilized to some extent. Less commonly, FPGAs use an antifuse as theprogramming element. The first generation of antifuse FPGAs usedantifuses that were built directly in contact with the silicon substrateitself. The second generation moved the antifuse to the metal layers toutilize what is called the Metal to Metal Antifuse. These antifusesfunction like vias. However, unlike vias that are made with the samemetal that is used for the interconnection, these antifuses generallyuse amorphous silicon and some additional interface layers. While intheory antifuse technology could support a higher density than SRAM, theSRAM FPGAs are dominating the market today. In fact, it seems that noone is advancing Antifuse FPGA devices anymore. One of the severedisadvantages of antifuse technology has been their lack ofre-programmability. Another disadvantage has been the special siliconmanufacturing process required for the antifuse technology which resultsin extra development costs and the associated time lag with respect tobaseline IC technology scaling.

The general disadvantage of common FPGA technologies is their relativelypoor use of silicon area. While the end customer only cares to have thedevice perform his desired function, the need to program the FPGA to anyfunction requires the use of a very significant portion of the siliconarea for the programming and programming check functions.

Some embodiments of the current invention seek to overcome the prior-artlimitations and provide some additional benefits by making use ofspecial types of transistors that are fabricated above the antifuseconfigurable interconnect circuits and thereby allow far better use ofthe silicon area.

One type of such transistors is commonly known in the art as Thin FilmTransistors or TFT. Thin Film Transistors has been proposed and used forover three decades. One of the better-known usages has been for displayswhere the TFT are fabricated on top of the glass used for the display.Other type of transistors that could be fabricated above the antifuseconfigurable interconnect circuits are called Vacuum FET and wasintroduced three decades ago such as in U.S. Pat. No. 4,721,885.

Other techniques could also be used such as an SOI approach. In U.S.Pat. Nos. 6,355,501 and 6,821,826, both assigned to IBM, a multilayerthree-dimensional—3D—CMOS Integrated Circuit is proposed. It suggestsbonding an additional thin SOI wafer on top of another SOI wafer formingan integrated circuit on top of another integrated circuit andconnecting them by the use of a through-silicon-via. Substrate supplierSoitec SA, Bernin, France is now offering a technology for stacking of athin layer of a processed wafer on top of a base wafer.

Integrating top layer transistors above an insulation layer is notcommon in an IC because the base layer of crystallized silicon is idealto provide high density and high quality transistors, and hencepreferable. There are some applications where it was suggested to buildmemory cells using such transistors as in U.S. Pat. Nos. 6,815,781,7,446,563 and a portion of an SRAM based FPGA such as in U.S. Pat. Nos.6,515,511 and 7,265,421.

Embodiments of the current invention seek to take advantage of the toplayer transistor to provide a much higher density antifuse-basedprogrammable logic. An additional advantage for such use will be theoption to further reduce cost in high volume production by utilizingcustom mask(s) to replace the antifuse function, thereby eliminating thetop layer(s) anti-fuse programming logic altogether.

SUMMARY

Embodiments of the present invention seek to provide a new method forsemiconductor device fabrication that may be highly desirable for customproducts. Embodiments of the current invention suggest the use of aRe-programmable antifuse in conjunction with ‘Through Silicon Via’ toconstruct a new type of configurable logic, or as usually called, FPGAdevices. Embodiments of the current invention may provide a solution tothe challenge of high mask-set cost and low flexibility that exists inthe current common methods of semiconductor fabrication. An additionaladvantage of some embodiments of the invention is that it could reducethe high cost of manufacturing the many different mask sets required inorder to provide a commercially viable range of master slices.Embodiments of the current invention may improve upon the prior art inmany respects, which may include the way the semiconductor device isstructured and methods related to the fabrication of semiconductordevices.

Embodiments of the current invention reflect the motivation to save onthe cost of masks with respect to the investment that would otherwisehave been required to put in place a commercially viable set of masterslices. Embodiments of the current invention also seek to provide theability to incorporate various types of memory blocks in theconfigurable device. Embodiments of the current invention provide amethod to construct a configurable device with the desired amount oflogic, memory, I/Os, and analog functions.

In addition, embodiments of the current invention allow the use ofrepeating logic tiles that provide a continuous terrain of logic.Embodiments of the current invention show that with Through-Silicon-Via(TSV) a modular approach could be used to construct various configurablesystems. Once a standard size and location of TSV has been defined onecould build various configurable logic dies, configurable memory dies,configurable I/O dies and configurable analog dies which could beconnected together to construct various configurable systems. In fact itmay allow mix and match between configurable dies, fixed function dies,and dies manufactured in different processes.

Embodiments of the current invention seek to provide additional benefitsby making use of special type of transistors that are placed above theantifuse configurable interconnect circuits and thereby allow a farbetter use of the silicon area. In general an FPGA device that utilizesantifuses to configure the device function may include the electroniccircuits to program the antifuses. The programming circuits may be usedprimarily to configure the device and are mostly an overhead once thedevice is configured. The programming voltage used to program theantifuse may typically be significantly higher than the voltage used forthe operating circuits of the device. The design of the antifusestructure may be designed such that an unused antifuse will notaccidentally get fused. Accordingly, the incorporation of the antifuseprogramming in the silicon substrate may require special attention forthis higher voltage, and additional silicon area may, accordingly, berequired.

Unlike the operating transistors that are desired to operate as fast aspossible, to enable fast system performance, the programming circuitscould operate relatively slowly. Accordingly using a thin filmtransistor for the programming circuits could fit very well with therequired function and would reduce the required silicon area.

The programming circuits may, therefore, be constructed with thin filmtransistors, which may be fabricated after the fabrication of theoperating circuitry, on top of the configurable interconnection layersthat incorporate and use the antifuses. An additional advantage of suchembodiments of the invention is the ability to reduce cost of the highvolume production. One may only need to use mask-defined links insteadof the antifuses and their programming circuits. This will in most casesrequire one custom via mask, and this may save steps associated with thefabrication of the antifuse layers, the thin film transistors, and/orthe associated connection layers of the programming circuitry.

In accordance with an embodiment of the present invention an IntegratedCircuit device is thus provided, comprising; a plurality of antifuseconfigurable interconnect circuits and plurality of transistors toconfigure at least one of said antifuse; wherein said transistors arefabricated after said antifuse.

Further provided in accordance with an embodiment of the presentinvention is an Integrated Circuit device comprising; a plurality ofantifuse configurable interconnect circuits and plurality of transistorsto configure at least one of said antifuse; wherein said transistors areplaced over said antifuse.

Still further in accordance with an embodiment of the present inventionthe Integrated Circuit device comprises second antifuse configurablelogic cells and plurality of second transistors to configure said secondantifuse wherein these second transistors are fabricated before saidsecond antifuse.

Still further in accordance with an embodiment of the present inventionthe Integrated Circuit device comprises also second antifuseconfigurable logic cells and a plurality of second transistors toconfigure said second antifuse wherein said second transistors areplaced underneath said second antifuse.

Further provided in accordance with an embodiment of the presentinvention is an Integrated Circuit device comprising; first antifuselayer, at least two metal layers over it and a second antifuse layerover this two metal layers.

In accordance with an embodiment of the present invention a configurablelogic device is presented, comprising: antifuse configurable look uptable logic interconnected by antifuse configurable interconnect.

In accordance with an embodiment of the present invention a configurablelogic device is also provided, comprising: plurality of configurablelook up table logic, plurality of configurable PLA logic, and pluralityof antifuse configurable interconnect.

In accordance with an embodiment of the present invention a configurablelogic device is also provided, comprising: plurality of configurablelook up table logic and plurality of configurable drive cells whereinthe drive cells are configured by plurality of antifuses.

In accordance with an embodiment of the present invention a configurablelogic device is additionally provided, comprising: configurable logiccells interconnected by a plurality of antifuse configurableinterconnect circuits wherein at least one of the antifuse configurableinterconnect circuits is configured as part of a non volatile memory.

Further in accordance with an embodiment of the present invention theconfigurable logic device comprises at least one antifuse configurableinterconnect circuit, which is also configurable to a PLA function.

In accordance with an alternative embodiment of the present invention anintegrated circuit system is also provided, comprising a configurablelogic die and an I/O die wherein the configurable logic die is connectedto the I/O die by the use of Through-Silicon-Via.

Further in accordance with an embodiment of the present invention theintegrated circuit system comprises; a configurable logic die and amemory die wherein these dies are connected by the use ofThrough-Silicon-Via.

Still further in accordance with an embodiment of the present inventionthe integrated circuit system comprises a first configurable logic dieand second configurable logic die wherein the first configurable logicdie and the second configurable logic die are connected by the use ofThrough-Silicon-Via.

Moreover in accordance with an embodiment of the present invention theintegrated circuit system comprises an I/O die that was fabricatedutilizing a different process than the process utilized to fabricate theconfigurable logic die.

Further in accordance with an embodiment of the present invention theintegrated circuit system comprises at least two logic dies connected bythe use of Through-Silicon-Via and wherein some of theThrough-Silicon-Vias are utilized to carry the system bus signal.

Moreover in accordance with an embodiment of the present invention theintegrated circuit system comprises at least one configurable logicdevice.

Further in accordance with an embodiment of the present invention theintegrated circuit system comprises, an antifuse configurable logic dieand programmer die and these dies are connected by the use ofThrough-Silicon-Via.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the present invention will be understood andappreciated more fully from the following detailed description, taken inconjunction with the drawings in which:

FIG. 1 is a circuit diagram illustration of a prior art;

FIG. 2 is a cross-section illustration of a portion of a prior artrepresented by the circuit diagram of FIG. 1;

FIG. 3A is a drawing illustration of a programmable interconnectstructure;

FIG. 3B is a drawing illustration of a programmable interconnectstructure;

FIG. 4A is a drawing illustration of a programmable interconnect tile;

FIG. 4B is a drawing illustration of a programmable interconnect of 2×2tiles;

FIG. 5A is a drawing illustration of an inverter logic cell;

FIG. 5B is a drawing illustration of a buffer logic cell;

FIG. 5C is a drawing illustration of a configurable strength bufferlogic cell;

FIG. 5D is a drawing illustration of a D-Flip Flop logic cell;

FIG. 6 is a drawing illustration of a LUT 4 logic cell;

FIG. 6A is a drawing illustration of a PLA logic cell;

FIG. 7 is a drawing illustration of a programmable cell;

FIG. 8 is a drawing illustration of a programmable device layersstructure;

FIG. 8A is a drawing illustration of a programmable device layersstructure;

FIG. 9A through 9C are a drawing illustration of an IC system utilizingThrough Silicon Via of a prior art;

FIG. 10A is a drawing illustration of continuous array wafer of a priorart;

FIG. 10B is a drawing illustration of continuous array portion of waferof a prior art;

FIG. 10C is a drawing illustration of continuous array portion of waferof a prior art;

FIG. 11A through 11F are a drawing illustration of one reticle site on awafer;

FIG. 12A through 12E are a drawing illustration of Configurable system;and

FIG. 13 a drawing illustration of a flow chart for 3D logicpartitioning;

FIG. 14 is a drawing illustration of a layer transfer process flow;

FIG. 15 is a drawing illustration of an underlying programming circuits;

FIG. 16 is a drawing illustration of an underlying isolation transistorscircuits;

FIG. 17A is a topology drawing illustration of underlying back biascircuitry;

FIG. 17B is a drawing illustration of underlying back bias circuits;

FIG. 17C is a drawing illustration of power control circuits

FIG. 17D is a drawing illustration of probe circuits

FIG. 18 is a drawing illustration of an underlying SRAM;

FIG. 19A is a drawing illustration of an underlying I/O;

FIG. 19B is a drawing illustration of side “cut”;

FIG. 19C is a drawing illustration of a 3D IC system;

FIG. 19D is a drawing illustration of a 3D IC processor and DRAM system;

FIG. 19E is a drawing illustration of a 3D IC processor and DRAM system;

FIG. 19F is a drawing illustration of a custom SOI wafer used to buildthrough-silicon connections;

FIG. 19G is a drawing illustration of a prior art method to makethrough-silicon vias;

FIG. 19H is a drawing illustration of a process flow for making customSOI wafers;

FIG. 19I is a drawing illustration of a processor-DRAM stack;

FIG. 19J is a drawing illustration of a process flow for making customSOI wafers;

FIG. 20 is a drawing illustration of a layer transfer process flow;

FIG. 21A is a drawing illustration of a pre-processed wafer used for alayer transfer;

FIG. 21B is a drawing illustration of a pre-processed wafer ready for alayer transfer;

FIG. 22A-22H are drawing illustrations of formation of top planartransistors;

FIG. 23A, 23B is a drawing illustration of a pre-processed wafer usedfor a layer transfer;

FIG. 24A-24F are drawing illustrations of formation of top planartransistors;

FIG. 25A, 25B is a drawing illustration of a pre-processed wafer usedfor a layer transfer;

FIG. 26A-26E are drawing illustrations of formation of top planartransistors;

FIG. 27A, 27B is a drawing illustration of a pre-processed wafer usedfor a layer transfer;

FIG. 28A-28E are drawing illustrations of formations of top transistors;

FIG. 29A-29G are drawing illustrations of formations of top planartransistors;

FIG. 30 is a drawing illustration of a donor wafer;

FIG. 31 is a drawing illustration of a transferred layer on top of amain wafer;

FIG. 32 is a drawing illustration of a measured alignment offset;

FIG. 33A, 33B is a drawing illustration of a connection strip;

FIG. 34A-34E are drawing illustrations of pre-processed wafers used fora layer transfer;

FIG. 35A-35G are drawing illustrations of formations of top planartransistors;

FIG. 36 is a drawing illustration of a tile array wafer;

FIG. 37 is a drawing illustration of a programmable end device;

FIG. 38 is a drawing illustration of modified JTAG connections;

FIG. 39A-39C are drawing illustration of pre-processed wafers used forvertical transistors;

FIG. 40A-40I are drawing illustrations of a vertical n-MOSFET toptransistor;

FIG. 41 is a drawing illustration of a 3D IC system with redundancy;

FIG. 42 is a drawing illustration of an inverter cell;

FIG. 43 A-C is a drawing illustration of preparation steps for formationof a 3D cell;

FIG. 44 A-F is a drawing illustration of steps for formation of a 3Dcell;

FIG. 45 A-G is a drawing illustration of steps for formation of a 3Dcell;

FIG. 46 A-C is a drawing illustration of a layout and cross sections ofa 3D inverter cell;

FIG. 47 is a drawing illustration of a 2-input NOR cell;

FIG. 48 A-C are drawing illustrations of a layout and cross sections ofa 3D 2-input NOR cell;

FIG. 49 A-C are drawing illustrations of a 3D 2-input NOR cell;

FIG. 50 A-D are drawing illustrations of a 3D CMOS Transmission cell;

FIG. 51 A-D are drawing illustrations of a 3D CMOS SRAM cell;

FIG. 52A, 52B are device simulations of a junction-less transistor;

FIG. 53 A-E are drawing illustrations of a 3D CAM cell;

FIG. 54 A-C are drawing illustrations of the formation of ajunction-less transistor;

FIG. 55 A-I are drawing illustrations of the formation of ajunction-less transistor;

FIG. 56A-M are drawing illustrations of the formation of a junction-lesstransistor;

FIG. 57A-G are drawing illustrations of the formation of a junction-lesstransistor;

FIG. 58 A-G are drawing illustrations of the formation of ajunction-less transistor;

FIG. 59 is a drawing illustration of a metal interconnect stack priorart;

FIG. 60 is a drawing illustration of a metal interconnect stack;

FIG. 61 A-I are drawing illustrations of a junction-less transistor;

FIG. 62 A-D are drawing illustrations of a 3D NAND2 cell;

FIG. 63 A-G are drawing illustrations of a 3D NAND8 cell;

FIG. 64 A-G are drawing illustrations of a 3D NOR8 cell;

FIG. 65A-C are drawing illustrations of the formation of a junction-lesstransistor;

FIG. 66 are drawing illustrations of recessed channel array transistors;

FIG. 67A-F are drawing illustrations of formation of recessed channelarray transistors;

FIG. 68A-F are drawing illustrations of formation of spherical recessedchannel array transistors.

DETAILED DESCRIPTION

Embodiments of the present invention are now described with reference toFIGS. 1-68, it being appreciated that the figures illustrate the subjectmatter not to scale or to measure.

FIG. 1 illustrates a circuit diagram illustration of a prior art, where,for example, 860-1 to 860-4 are the programming transistors to programantifuse 850-1,1.

FIG. 2 is a cross-section illustration of a portion of a prior artrepresented by the circuit diagram of FIG. 1 showing the programmingtransistor 860-1 built as part of the silicon substrate.

FIG. 3A is a drawing illustration of a programmable interconnect tile.310-1 is one of 4 horizontal metal strips, which form a band of strips.The typical IC today has many metal layers. In a typical programmabledevice the first two or three metal layers will be used to construct thelogic elements. On top of them metal 4 to metal 7 will be used toconstruct the interconnection of those logic elements. In an FPGA devicethe logic elements are programmable, as well as the interconnectsbetween the logic elements. The configurable interconnect of the currentinvention is constructed from 4 metal layers or more. For example, metal4 and 5 could be used for long strips and metal 6 and 7 would compriseshort strips. Typically the strips forming the programmable interconnecthave mostly the same length and are oriented in the same direction,forming a parallel band of strips as 310-1, 310-2, 310-3 and 310-4.Typically one band will comprise 10 to 40 strips. Typically the stripsof the following layer will be oriented perpendicularly as illustratedin FIG. 3A, wherein strips 310 are of metal 6 and strips 308 are ofmetal 7. In this example the dielectric between metal 6 and metal 7comprises antifuse positions at the crossings between the strips ofmetal 6 and metal 7. Tile 300 comprises 16 such antifuses. 312-1 is theantifuse at the cross of strip 310-4 and 308-4. If activated, it willconnect strip 310-4 with strip 308-4. FIG. 3A was made simplified, asthe typical tile will comprise 10-40 strips in each layer andmultiplicity of such tiles, which comprises the antifuse configurableinterconnect structure.

304 is one of the Y programming transistors connected to strip 310-1.318 is one of the X programming transistors connected to strip 308-4.302 is the Y select logic which at the programming phase allows theselection of a Y programming transistor. 316 is the X select logic whichat the programming phase allows the selection of an X programmingtransistor. Once 304 and 318 are selected the programming voltage 306will be applied to strip 310-1 while strip 308-4 will be groundedcausing the antifuse 312-4 to be activated.

FIG. 3B is a drawing illustration of a programmable interconnectstructure 300B. 300B is variation of 300A wherein some strips in theband are of a different length. Instead of strip 308-4 in this variationthere are two shorter strips 308-4B1 and 308-4B2. This might be usefulfor bringing signals in or out of the programmable interconnectstructure 300B in order to reduce the number of strips in the tile, thatare dedicated to bringing signals in and out of the interconnectstructure versus strips that are available to perform the routing. Insuch variation the programming circuit needs to be augmented to supportthe programming of antifuses 312-3B and 312-4B.

Unlike the prior art, various embodiments of the current inventionsuggest constructing the programming transistors not in the base silicondiffusion layer but rather above the antifuse configurable interconnectcircuits. The programming voltage used to program the antifuse istypically significantly higher than the voltage used for the operationalcircuits of the device. This is part of the design of the antifusestructure so that the antifuse will not become accidentally activated.In addition, extra attention, design effort, and silicon resources mightbe needed to make sure that the programming phase will not damage theoperating circuits. Accordingly the incorporation of the antifuseprogramming transistors in the silicon substrate may require attentionand extra silicon area.

Unlike the operational transistors that are desired to operate as fastas possible and so to enable fast system performance, the programmingcircuits could operate relatively slowly. Accordingly, a thin filmtransistor for the programming circuits could fit the required functionand could reduce the require silicon area.

Alternatively other type of transistors, such as Vacuum FET, bipolar,etc., could be used for the programming circuits and be placed not inthe base silicon but rather above the antifuse configurableinterconnect.

Yet in another alternative the programming transistors and theprogramming circuits could be fabricated on SOI wafers which may then bebonded to the configurable logic wafer and connected to it by the use ofthrough-silicon-via. An advantage of using an SOI wafer for the antifuseprogramming function is that the high voltage transistors that could bebuilt on it are very efficient and could be used for the programmingcircuit including support function such as the programming controllerfunction. Yet as an additional variation, the programming circuits couldbe fabricated on an older process on SOI wafers to further reduce cost.Or some other process technology and/or wafer fab located anywhere inthe world.

Also there are advanced technologies to deposit silicon or othersemiconductors layers that could be integrated on top of the antifuseconfigurable interconnect for the construction of the antifuseprogramming circuit. As an example, a recent technology proposed the useof a plasma gun to spray semiconductor grade silicon to formsemiconductor structures including, for example, a p-n junction. Thesprayed silicon may be doped to the respective semiconductor type. Inaddition there are more and more techniques to use graphene and CarbonNano Tubes (CNT) to perform a semiconductor function. For the purpose ofthis invention we will use the term “Thin-Film-Transistors” as generalname for all those technologies, as well as any similar technologies,known or yet to be discovered.

A common objective is to reduce cost for high volume production withoutredesign and with minimal additional mask cost. The use ofthin-film-transistors, for the programming transistors, enables arelatively simple and direct volume cost reduction. Instead of embeddingantifuses in the isolation layer a custom mask could be used to definevias on all the locations that used to have their respective antifuseactivated. Accordingly the same connection between the strips that usedto be programmed is now connected by fixed vias. This may allow savingthe cost associated with the fabrication of the antifuse programminglayers and their programming circuits. It should be noted that theremight be differences between the antifuse resistance and the maskdefined via resistance. A conventional way to handle it is by providingthe simulation models for both options so the designer could validatethat the design will work properly in both cases.

An additional objective for having the programming circuits above theantifuse layer is to achieve better circuit density. Many connectionsare needed to connect the programming transistors to their respectivemetal strips. If those connections are going upward they could reducethe circuit overhead by not blocking interconnection routes on theconnection layers underneath.

While FIG. 3A shows an interconnection structure of 4×4 strips, thetypical interconnection structure will have far more strips and in manycases more than 20×30. For a 20×30 tile there is needed about 20+30=50programming transistors. The 20×30 tile area is about 20 hp×30 vp where‘hp’ is the horizontal pitch and ‘vp’ is the vertical pitch. This mayresult in a relatively large area for the programming transistor ofabout 12 hp×vp (20 hp×30 vp/50=12 hp×vp). Additionally, the areaavailable for each connection between the programming layer and theprogrammable interconnection fabric needs to be handled. Accordingly,one or two redistribution layers might be needed in order toredistribute the connection within the available area and then bringthose connections down, preferably aligned so to create minimum blockageas they are routed to the underlying strip 310 of the programmableinterconnection structure.

FIG. 4A is a drawing illustration, of a programmable interconnect tile300 and another programmable interface tile 320. As a higher silicondensity is achieved it becomes desirable to construct the configurableinterconnect in the most compact fashion. FIG. 4B is a drawingillustration of a programmable interconnect of 2×2 tiles. It comprisescheckerboard style of tiles 300 and tiles 320 which is a tile 300rotated by 90 degrees. For a signal to travel South to North, south tonorth strips need to be connected with antifuses such as 406. 406 and410 are antifuses that are positioned at the end of a strip to allow itto connect to another strip in the same direction. The signal travelingfrom South to North is alternating from metal 6 to metal 7. Once thedirection needs to change, an antifuse such as 312-1 is used.

The configurable interconnection structure function may be used tointerconnect the output of logic cells to the input of logic cells toconstruct the desired semi-custom logic. The logic cells themselves areconstructed by utilizing the first few metal layers to connecttransistors that are built in the silicon substrate. Usually the metal 1layer and metal 2 layer are used for the construction of the logiccells. Sometimes it is effective to also use metal 3 or a part of it.

FIG. 5A is a drawing illustration of inverter 504 with an input 502 andan output 506. An inverter is the simplest logic cell. The input 502 andthe output 506 might be connected to strips in the configurableinterconnection structure.

FIG. 5B is a drawing illustration of a buffer 514 with an input 512 andan output 516. The input 512 and the output 516 might be connected tostrips in the configurable interconnection structure.

FIG. 5C is a drawing illustration of a configurable strength buffer 524with an input 522 and an output 526. The input 522 and the output 526might be connected to strips in the configurable interconnectionstructure. 524 is configurable by means of antifuses 528-1, 528-2 and528-3 constructing an antifuse configurable drive cell.

FIG. 5D is a drawing illustration of D-Flip Flop 534 with inputs 532-2,and output 536 with control inputs 532-1, 532-3, 532-4 and 532-5. Thecontrol signals could be connected to the configurable interconnects orto local or global control signals.

FIG. 6 is a drawing illustration of a LUT 4. LUT4 604 is a well-knownlogic element in the FPGA art called a 16 bit Look-Up-Table or in shortLUT4. It has 4 inputs 602-1, 602-2, 602-3 and 602-4. It has an output606. In general a LUT4 can be programmed to perform any logic functionof 4 inputs or less. The LUT function of FIG. 6 may be implemented by 32antifuses such as 608-1. 604-5 is a two to one multiplexer. The commonway to implement a LUT4 in FPGA is by using 16 SRAM bit-cells and 15multiplexers. The illustration of FIG. 6 demonstrates an antifuseconfigurable look-up-table implementation of a LUT4 by 32 antifuses and7 multiplexers. The programmable cell of FIG. 6 may comprise additionalinputs 602-6, 602-7 with additional 8 antifuse for each input to allowsome functionality in addition to just LUT4.

FIG. 6A is a drawing illustration of a PLA logic cell 6A00. This used tobe the most popular programmable logic primitive until LUT logic tookthe leadership. Other acronyms used for this type of logic are PLD andPAL. 6A01 is one of the antifuses that enables the selection of thesignal fed to the multi-input AND 6A14. In this drawing any crossbetween vertical line and horizontal line comprises an antifuse to allowthe connection to be made according to the desired end function. Thelarge AND cell 6A14 constructs the product term by performing the ANDfunction on the selection of inputs 6A02 or their inverted replicas. Amulti-input OR 6A15 performs the OR function on a selection of thoseproduct terms to construct an output 6A06. FIG. 6A illustrates anantifuse configurable PLA logic.

The logic cells presented in FIG. 5, FIG. 6 and FIG. 6A are justrepresentatives. There exist many options for construction ofprogrammable logic fabric including additional logic cells such as AND,MUX and many others, and variations on those cells. Also, in theconstruction of the logic fabric there might be variation with respectto which of their inputs and outputs are connected by the configurableinterconnect fabric and which are connected directly in anon-configurable way.

FIG. 7 is a drawing illustration of a programmable cell 700. By tilingsuch cells a programmable fabric is constructed. The tiling could be ofthe same cell being repeated over and over to form a homogenous fabric.Alternatively, a blend of different cells could be tiled forheterogeneous fabric. The logic cell 700 could be any of those presentedin FIGS. 5 and 6, a mix and match of them or other primitives asdiscussed before. The logic cell 710 inputs 702 and output 706 areconnected to the configurable interconnection fabric 720 with input andoutput strips 708 with associated antifuses 701. The short interconnects722 are comprising metal strips that are the length of the tile, theycomprise horizontal strips 722H, on one metal layer and vertical strips722V on another layer, with antifuse 701HV in the cross between them, toallow selectively connecting horizontal strip to vertical strip. Theconnection of a horizontal strip to another horizontal strip is withantifuse 701HH that functions like antifuse 410 of FIG. 4. Theconnection of a vertical strip to another vertical strip is withantifuse 701VV that functions like fuse 406 of FIG. 4. The longhorizontal strips 724 are used to route signals that travel a longerdistance, usually the length of 8 or more tiles. Usually one strip ofthe long bundle will have a selective connection by antifuse 724LH tothe short strips, and similarly, for the vertical long strips 724. FIG.7 illustrates the programmable cell 700 as a two dimensionalillustration. In real life 700 is a three dimensional construct wherethe logic cell 710 utilizes the base silicon with Metal 1, Metal 2, andsome times Metal 3. The programmable interconnect fabric including theassociated antifuses will be constructed on top of it.

FIG. 8 is a drawing illustration of a programmable device layersstructure according to an alternative of the current invention. In thisalternative there are two layers comprising antifuses. The first isdesignated to configure the logic terrain and, in some cases, to alsoconfigure the logic clock distribution. The first antifuse layer couldalso be used to manage some of the power distribution to save power bynot providing power to unused circuits. This layer could also be used toconnect some of the long routing tracks and/or connections to the inputsand outputs of the logic cells.

The device fabrication of the example shown in FIG. 8 starts with thesemiconductor substrate 802 comprising the transistors used for thelogic cells and also the first antifuse layer programming transistors.Then comes layers 804 comprising Metal 1, dielectric, Metal 2, andsometimes Metal 3. These layers are used to construct the logic cellsand often I/O and other analog cells. In this alternative of the currentinvention a plurality of first antifuses are incorporated in theisolation layer between metal 1 and metal 2 or in the isolation layerbetween metal 2 and metal 3 and their programming transistors could beembedded in the silicon substrate 802 being underneath the firstantifuses. These first antifuses could be used to program logic cellssuch as 520, 600 and 700 and to connect individual cells to constructlarger logic functions. These first antifuses could also be used toconfigure the logic clock distribution. The first antifuse layer couldalso be used to manage some of the power distribution to save power bynot providing power to unused circuits. This layer could also be used toconnect some of the long routing tracks and/or one or more connectionsto the inputs and outputs of the cells.

The following few layers 806 could comprise long interconnection tracksfor power distribution and clock networks, or a portion of these, inaddition to what was fabricated in the first few layers 804.

The following few layers 808 could comprise the antifuse configurableinterconnection fabric. It might be called the short interconnectionfabric, too. If metal 6 and metal 7 are used for the strips of thisconfigurable interconnection fabric then the second antifuse may beembedded in the dielectric layer between metal 6 and metal 7.

The programming transistors and the other parts of the programmingcircuit could be fabricated afterward and be on top of the configurableinterconnection fabric 810. The programming element could be a thin filmtransistor or other alternatives for over oxide transistors as wasmentioned previously. In such case the antifuse programming transistorsare placed over the antifuse layer, which may thereby enable theconfigurable interconnect 808 or 804. It should be noted that in somecases it might be useful to construct part of the control logic for thesecond antifuse programming circuits, in the base layers 802 and 804.

The final step is the connection to the outside 812. These could be padsfor wire bonding, soldering balls for flip chip, optical, or otherconnection structures such as those required for TSV.

In another alternative of the current invention the antifuseprogrammable interconnect structure could be designed for multiple use.The same structure could be used as a part of the interconnectionfabric, or as a part of the PLA logic cell, or as part of a ROMfunction. In an FPGA product it might be desirable to have an elementthat could be used for multiple purposes. Having resources that could beused for multiple functions could increase the utility of the FPGAdevice.

FIG. 8A is a drawing illustration of a programmable device layersstructure according to another alternative of the current invention. Inthis alternative there is additional circuit 814 connected by contactconnection 816 to the first antifuse layer 804. This underlying deviceis providing the programming transistor for the first antifuse layer804. In this way, the programmable device substrate diffusion layer 816does not suffer the cost penalty of the programming transistors requiredfor the first antifuse layer 804. Accordingly the programming connectionof the first antifuse layer will be directed downward to connect to theunderlying programming device 814 while the programming connection tothe second antifuse layer will be directed upward to connect to theprogramming circuits 810. This could provide less congestion of thecircuit internal interconnection routes.

An alternative technology for such underlying circuitry is to use the“SmartCut” process. The “SmartCut” process is a well understoodtechnology used for fabrication of SOI wafers. The “SmartCut” process,together with wafer bonding technology, enables a “Layer Transfer”whereby a thin layer of a silicon wafer is transferred from one wafer toanother wafer. The “Layer Transfer” could be done at less than 400° C.and the resultant transferred layer could be even less than 100 nmthick. The process with some variations and under different name iscommercially available by two companies—Soitec, Crolles, France andSiGen—Silicon Genesis Corporation, San Jose, Calif.

FIG. 14 is a drawing illustration of a layer transfer process flow. Inanother alternative of the invention, “Layer-Transfer” is used forconstruction of the underlying circuitry 814. 1402 is a wafer that wasprocessed to construct the underlying circuitry. The wafer 1402 could beof the most advanced process or more likely a few generations behind. Itcould comprise the programming circuits 814 and other useful structures.An oxide layer 1412 is then deposited on top of the wafer 1402 and thenis polished for better planarization and surface preparation. A donorwafer 1406 is then brought in to be bonded to 1402. The surfaces of bothdonor wafer 1406 and wafer 1402 may have a plasma pretreatment toenhance the bond strength. The donor wafer 1406 is pre-prepared for“SmartCut” by an ion implant of an atomic species, such as H+ ions, atthe desired depth to prepare the SmartCut line 1408. After bonding thetwo wafers a SmartCut step is performed to cleave and remove the topportion 1414 of the donor wafer 1406 along the cut layer 1408. Theresult is a 3D wafer 1410 which comprises wafer 1402 with an added layer1404 of crystallized silicon. Layer 1404 could be quite thin at therange of 50-200 nm as desired. The described flow is called “layertransfer”. Layer transfer is commonly utilized in the fabrication ofSOI—Silicon On Insulator—wafers. For SOI wafers the upper surface isoxidized so that after “layer transfer” a buried oxide—BOX—providesisolation between the top thin crystallized silicon layer and the bulkof the wafer.

Now that a “layer transfer” process is used to bond a thin crystallizedsilicon layer 1404 on top of the preprocessed wafer 1402, a standardprocess could ensue to construct the rest of the desired circuits as isillustrated in FIG. 8A, starting with layer 802 on the transferred layer1404. The lithography step will use alignment marks on wafer 1402 so thefollowing circuits 802 and 816 and so forth could be properly connectedto the underlying circuits 814. An aspect that should be accounted foris the high temperature that would be needed for the processing ofcircuits 802. The pre-processed circuits on wafer 1402 would need towithstand this high temperature needed for the activation of thesemiconductor transistors 802 fabricated on the 1404 layer. Thosefoundation circuits on wafer 1402 will comprise transistors and localinterconnects of poly-silicon and some other type of interconnectionthat could withstand high temperature such as tungsten. An advantage ofusing layer transfer for the construction of the underlying circuits ishaving the layer transferred 1404 be very thin which enables the throughsilicon via connections 816 to have low aspect ratios and be more likenormal contacts, which could be made very small and with minimum areapenalty. The thin transferred layer also allows conventional directthru-layer alignment techniques to be performed, thus increasing thedensity of silicon via connections 816.

FIG. 15 is a drawing illustration of an underlying programming circuit.Programming Transistors 1501 and 1502 are pre-fabricated on thefoundation wafer 1402 and then the programmable logic circuits and theantifuse 1504 are built on the transferred layer 1404. The programmingconnections 1506, 1508 are connected to the programming transistors bycontact holes through layer 1404 as illustrated in FIG. 8A by 816. Theprogramming transistors are designed to withstand the relatively higherprogramming voltage required for the antifuse 1504 programming.

FIG. 16 is a drawing illustration of an underlying isolation transistorcircuit. The higher voltage used to program the antifuse 1604 mightdamage the logic transistors 1606, 1608. To protect the logic circuits,isolation transistors 1601, 1602, which are designed to withstand highervoltage, are used. The higher programming voltage is only used at theprogramming phase at which time the isolation transistors are turned offby the control circuit 1603. The underlying wafer 1402 could also beused to carry the isolation transistors. Having the relatively largeprogramming transistors and isolation transistor on the foundationsilicon 1402 allows far better use of the primary silicon 802 (1404).Usually the primary silicon will be built in an advanced process toprovide high density and performance. The foundation silicon could bebuilt in a less advanced process to reduce costs and support the highervoltage transistors. It could also be built with other than CMOStransistors such as DMOS or bi-polar when such is advantageous for theprogramming and the isolation function. In many cases there is a need tohave protection diodes for the gate input that are called Antennas. Suchprotection diodes could be also effectively integrated in the foundationalongside the input related Isolation Transistors. On the other hand theisolation transistors 1601, 1602 would provide the protection for theantenna effect so no additional diodes would be needed.

An additional alternative embodiment of the invention is where thefoundation layer 1402 is pre-processed to carry a plurality of back biasvoltage generators. A known challenge in advanced semiconductor logicdevices is die-to-die and within-a-die parameter variations. Varioussites within the die might have different electrical characteristics dueto dopant variations and such. The most critical of these parametersthat affect the variation is the threshold voltage of the transistor.Threshold voltage variability across the die is mainly due to channeldopant, gate dielectric, and critical dimension variability. Thisvariation becomes profound in sub 45 nm node devices. The usualimplication is that the design should be done for the worst case,resulting in a quite significant performance penalty. Alternativelycomplete new designs of devices are being proposed to solve thisvariability problem with significant uncertainty in yield and cost. Apossible solution is to use localized back bias to drive upward theperformance of the worst zones and allow better overall performance withminimal additional power. The foundation-located back bias could also beused to minimize leakage due to process variation.

FIG. 17A is a topology drawing illustration of back bias circuitry. Thefoundation layer 1402 carries back bias circuits 1711 to allow enhancingthe performance of some of the zones 1710 on the primary device whichotherwise will have lower performance.

FIG. 17B is a drawing illustration of back bias circuits. A back biaslevel control circuit 1720 is controlling the oscillators 1727 and 1729to drive the voltage generators 1721. The negative voltage generator1725 will generate the desired negative bias which will be connected tothe primary circuit by connection 1723 to back bias the NMOS transistors1732 on the primary silicon 1404. The positive voltage generator 1726will generate the desired negative bias which will be connected to theprimary circuit by connection 1724 to back bias the PMOS transistors1724 on the primary silicon 1404. The setting of the proper back biaslevel per zone will be done in the initiation phase. It could be done byusing external tester and controller or by on-chip self test circuitry.Preferably a non volatile memory will be used to store the per zone backbias voltage level so the device could be properly initialized at powerup. Alternatively a dynamic scheme could be used where different backbias level(s) are used in different operating modes of the device.Having the back bias circuitry in the foundation allows betterutilization of the primary device silicon resources and less distortionfor the logic operation on the primary device.

FIG. 17C illustrates an alternative circuit function that may fit wellin the “Foundation.” In many IC designs it is desired to integrate powercontrol to reduce either voltage to sections of the device or to totallypower off these sections when those sections are not needed or in analmost ‘sleep’ mode. In general such power control is best done withhigher voltage transistors. Accordingly a power control circuit cell17C02 may be constructed in the Foundation. Such power control 17C02 mayhave its own higher voltage supply and control or regulate supplyvoltage for sections 17C10 and 17C08 in the “Primary” device. Thecontrol may come from the primary device 17C16 and be managed by controlcircuit 17C04 in the Foundation.

FIG. 17D illustrates an alternative circuit function that may fit wellin the “Foundation.” In many IC designs it is desired to integrate aprobe auxiliary system that will make it very easy to probe the devicein the debugging phase, and to support production testing. Probecircuits have been used in the prior art sharing the same transistorlayer as the active circuit. FIG. 17D illustrates a probe circuitconstructed in the Foundation underneath the active circuits. FIG. 17Dillustrates that the connections are made to the sequential activecircuit elements 17D02. Those connections are routed to the Foundation17D06 where a high impedance probe circuitry 17D08 will be used to sensethe sequential element output. A selector circuit 17D12 allows one ofthose sequential outputs to be routed out, buffers 17D16 which arecontrolled by signals from the Primary circuit to supply the drive ofthe sequential output signal to the probed signal output 17D14 fordebugging or testing.

In another alternative the foundation substrate 1402 could additionallycarry SRAM cells as illustrated in FIG. 18. The SRAM cells 1802pre-fabricated on the underlying substrate 1402 could be connected 1812to the primary logic circuit 1806, 1808 built on 1404. As mentionedbefore, the layers built on 1404 could be aligned to the pre-fabricatedstructure on the underlying substrate 1402 so that the logic cells couldbe properly connected to the underlying RAM cells.

FIG. 19A is a drawing illustration of an underlying I/O. The foundation1402 could also be preprocessed to carry the I/O circuits or part of it,such as the relatively large transistors of the output drive 1912.Additionally TSV in the foundation could be used to bring the I/Oconnection 1914 all the way to the back side of the foundation. FIG. 19Bis a drawing illustration of a side “cut” of an integrated device. TheOutput Driver is illustrated by 19B06 using TSV 19B10 to connect to abackside pad 19B08. The connection material used in the foundation 1402can be selected to withstand the temperature of the following processconstructing the full device on 1404 as illustrated in FIG. 8A—802, 804,806, 808, 810, 812, such as tungsten. The foundation could also carrythe input protection circuit 1922 connecting the pad 19B08 to the inputlogic 1920 in the primary circuits.

Additional alternative is to use TSV 19B10 to connect between wafers toform 3D Integrated Systems. In general each TSV takes a relatively largearea—a few micron sq. When the need is for many TSVs, the overall costof the required area for these TSVs might be high if the use of thatarea for high density transistors is precluded. Pre-processing thesevias on the donor wafer on a relatively older process line willsignificantly reduce the effective costs of the 3D TSV connections. Theconnection 1924 to the primary silicon circuitry 1920 could be then madeat the minimum contact size of few tens of nanometers, which is twoorders of magnitude lower than the few microns required by the TSVs.FIG. 19B is for illustration only and is not drawn to scale.

FIG. 19C demonstrates a 3D system comprising three dies 19C10, 19C20 and19C30 connected with TSVs 19C12, 19C22 and 19C32 of the type describedbefore in 19B10. The stack of three dies utilize TSV in the Foundations19C12, 19C22, and 19C32 for the 3D interconnect allowing minimum effector silicon area loss of the Primary silicon 19C14, 19C24 and 19C34. Thethree die stacks may be connected to a PC Board using bumps 19C40connected to the bottom die TSVs 19C32.

FIG. 19D illustrates a 3D IC processor and DRAM system. A well knownproblem in the computing industry is known as the “memory wall” andrelates to the speed the processor can access the DRAM. The prior artproposed solution was to connect a DRAM stack using TSV directly on topof the processor and use a heat spreader attached to the processor backto remove the processor heat. But in order to do so, a special via needsto go “through DRAM” so that the processor I/Os and power could beconnected. Having many processor-related ‘through-DRAM vias” leads to afew severe disadvantages. First, it reduces the usable silicon area ofthe DRAM by a few percent. Second, it increases the power overhead by afew percent. Third, it requires that the DRAM design be coordinated withthe processor design which is very commercially challenging. FIG. 19Dsuggests a solution by having a foundation with TSV as illustrated inFIGS. 19B and 19C. The use of the foundation and house structure enablesthe connections of the processor without going through the DRAM.

In FIG. 19D the processor I/Os and power are connected from theface-down microprocessor active area 19D14—the ‘house,’ by vias 19D08 toan interposer 19D06. A heat spreader 19D12 the substrate 19D04 and heatsink 19D02 are used to spread the heat generated on the processor activearea 19D14. TSVs 19D22 through the Foundation 19D16 are used for theconnection of the DRAM stack 19D24. The DRAM stack comprises multiplethinned DRAM 19D18 interconnected by TSV 19D20. Accordingly the DRAMstack does not need to pass through the processor I/O and power planesand could be designed and produced independent of the processor designand layout. The DRAM chip 19D18 that is closest to the Foundation 19D16may be designed to connect to the Foundation TSVs 19D22, or a separateRDL (ReDistribution Layer) may be added in between, or the Foundation19D16 could serve that function with preprocessed high temperatureinterconnect layers, such as Tungsten, as described previously. And theprocessor's active area is not compromised by having TSVs through it asthose are done in the Foundation 19D16.

Alternatively the Foundation vias 19D22 could be used to pass theprocessor I/O and power to the substrate 19D04 and to the interposer19D06 while the DRAM stack would be connected directly to the processoractive area 19D14.

FIG. 19E illustrates another option wherein the DRAM stack 19D24 isconnected by wire bonds 19E24 to an RDL (ReDistribution Layer) 19E26that connects the DRAM to the Foundation vias 19D22, and thus connectsto the face-down processor 19D14.

In yet another embodiment, custom SOI wafers are used where NuVias 19F00may be processed by the wafer supplier. This is illustrated in FIG. 19Fwith handle wafer 19F02 and Buried Oxide BOX 19F01. The handles wafer19F02 may typically be many hundreds of microns thick, and the BOX 19F01may typically be a few hundred nanometers thick. The Integrated DeviceManufacturer (IDM) or foundry then processes NuContacts 19F03 to connectto the NuVias 19F00. The NuContact diameter D_(NuContact) 19F04, in FIG.19F may then be processed in the nanometer range. The prior art ofconstruction with bulk silicon wafers 19G00 as illustrated in FIG. 19Gtypically has a TSV diameter, D_(TSV) _(—) _(prior) _(—) _(art) 19G02,in the micron range. Reduced NuContact dimension D_(NuContact) 19F04 inFIG. 19F may have important implications for semiconductor designers.These implications may include reduced die size penalty ofthrough-silicon connections, reduced handling of very thin siliconwafers, and reduced design complexity. The arrangement of TSVs in customSOI wafers can be based on a high-volume integrated device manufacturer(IDM) or foundry's request, or be based on a commonly agreed industrystandard.

A process flow as illustrated in FIG. 19H may be utilized to manufacturethese custom SOI wafers. Such a flow may be used by a wafer supplier. Asilicon donor wafer 19H04 is taken and its surface 19H05 may beoxidized. Hydrogen may then be implanted at a certain depth 19H06.Oxide-to-oxide bonding as described in other embodiments may then beused to bond this wafer with another acceptor wafer 19H08 havingpre-processed NuVIAs 19H07. The NuVIAs 19H07 may be constructed with aconductive material, such as tungsten or doped silicon, that canwithstand high-temperature processing with an insulating barrier such assilicon oxide. Alternatively, the wafer supplier may construct NuVias19H07 with silicon oxide. The integrated device manufacturer or foundryetches out this oxide after the high-temperature transistor fabricationand may replace this oxide with a metal such as copper or aluminum. Thisprocess may allow a low-melting point, but highly conductive metal, likecopper to be used. Following the bonding, part 19H10 of the donorsilicon wafer 19H04 may be cleaved at 19H06 and then chemicallymechanically polished as described in other embodiments.

FIG. 19J depicts another technique to manufacture custom SOI wafers. Astandard SOI wafer with substrate 19J01, box 19F01, and top siliconlayer 19J02 may be taken and NuVias 19F00 may be formed from theback-side up to the oxide layer. This technique might require a thickerburied oxide 19F01 than a standard SOI process.

FIG. 19I depicts how a custom SOI wafer may be used for 3D stacking of aprocessor 19I09 and a DRAM 19I10. In this configuration, a processor'spower distribution and I/O connections have to pass from the substrate19I12, go through the DRAM 19I10 and then connect onto the processor19I09. The above described technique in FIG. 19F may results in smallcontact area on the DRAM active silicon, which is very convenient forthis processor-DRAM stacking application. The transistor area lost onthe DRAM die due to the through-silicon connection 19I13 and 19I14 isvery small due to the nanometer diameter NuContact 19I13 in the activeDRAM silicon. It is difficult to design a DRAM when large areas in itscenter are blocked by large through-silicon connections. Having smallsize through-silicon connections may help tackle this issue. Similarly,this technique may be applied to building processor-SRAM stacks,processor-flash memory stacks, processor-graphics processor-memorystacks and any combination of the above.

In yet another alternative, the foundation substrate 1402 couldadditionally carry re-drive cells. Re-drive cells are common in theindustry for signals which is routed over a relatively long path. As therouting has a severe resistance and capacitance penalty it is helpful toinsert re-drive circuits along the path to avoid a severe degradation ofsignal timing and shape. An advantage of having re-drivers in thefoundation 1402 is that these re-drivers could be constructed fromtransistors who could withstand the programming voltage. Otherwiseisolation transistors such as 1601 and 1602 should be used at the logiccell input and output.

FIG. 8A is a cut illustration of a programmable device, with twoantifuse layers. The programming transistors for the first one 804 couldbe prefabricated on 814, and then, utilizing “smart-cut”, a singlecrystal silicon layer 1404 is transferred on which the primaryprogrammable logic 802 is fabricated with advanced logic transistors andother circuits. Then multi-metal layers are fabricated including a lowerlayer of antifuses 804, interconnection layers 806 and second antifuselayer with its configurable interconnects 808. For the second antifuselayer the programming transistors 810 could be fabricated also utilizinga second “smart-cut” layer transfer.

FIG. 20 is a drawing illustration of the second layer transfer processflow. The primary processed wafer 2002 comprises all the priorlayers—814, 802, 804, 806, and 808. An oxide layer 2012 is thendeposited on top of the wafer 2002 and then polished for betterplanarization and surface preparation. A donor wafer 2006 is thenbrought in to be bonded to 2002. The donor wafer 2006 is pre processedto comprise the semiconductor layers 2019 which will be later used toconstruct the top layer of programming transistors 810 as an alternativeto the TFT transistors. The donor wafer 2006 is also prepared for“SmartCut” by ion implant of an atomic species, such as H+, at thedesired depth to prepare the SmartCut line 2008. After bonding the twowafers a SmartCut step is performed to pull out the top portion 2014 ofthe donor wafer 2006 along the cut layer 2008. The result is a 3D wafer2010 which comprises wafer 2002 with an added layer 2004 of singlecrystal silicon pre-processed to carry additional semiconductor layers.The transferred slice 2004 could be quite thin at the range of 10-200 nmas desired. Utilizing “SmartCut” layer transfer provides single crystalsemiconductors layer on top of a pre-processed wafer without heating thepre-processed wafer to more than 400° C.

There are a few alternatives to construct the top transistors preciselyaligned to the underlying pre-fabricated layers 808, utilizing“SmartCut” layer transfer and not exceeding the temperature limit of theunderlying pre-fabricated structure. As the layer transfer is less than200 nm thick, then the transistors defined on it could be alignedprecisely to the top metal layer of 808 as required and thosetransistors have less than 40 nm misalignment.

One alternative is to have a thin layer transfer of single crystalsilicon which will be used for epitaxial Ge crystal growth using thetransferred layer as the seed for the germanium. Another alternative isto use the thin layer transfer of crystallized silicon for epitaxialgrowth of Ge_(x)Si_(1-x). The percent Ge in Silicon of such layer wouldbe determined by the transistor specifications of the circuitry. Priorart have presented approaches whereby the base silicon is used toepi-crystallize the germanium on top of the oxide by using holes in theoxide to drive seeding from the underlying silicon crystal. However, itis very hard to do such on top of multiple interconnection layers. Byusing layer transfer we can have the silicon crystal on top and make itrelatively easy to seed and epi-crystallize an overlying germaniumlayer. Amorphous germanium could be conformally deposited by CVD at 300°C. and pattern aligned to the underlying layer 808 and then encapsulatedby a low temperature oxide. A short μs-duration heat pulse melts the Gelayer while keeping the underlying structure below 400° C. The Ge/Siinterface will start the epi-growth to crystallize the germanium layer.Then implants are made to form Ge transistors and activated by laserpulses without damaging the underlying structure taking advantage of thelow melting temperature of germanium.

Another alternative is to preprocess the wafer used for layer transfer2006 as illustrated in FIG. 21. FIG. 21A is a drawing illustration of apre-processed wafer used for a layer transfer. A P− wafer 2102 isprocessed to have a “buried” layer of N+ 2104, by implant andactivation, or by shallow N+ implant and diffusion followed by a P− epigrowth (epitaxial growth) 2106. Optionally, if a substrate contact isneeded for transistor performance, an additional shallow P+ layer 2108is implanted and activated. FIG. 21B is a drawing illustration of thepre-processed wafer made ready for a layer transfer by an implant of anatomic species, such as H+, preparing the SmartCut “cleaving plane” 2110in the lower part of the N+ region and an oxide deposition or growth2112 in preparation for oxide to oxide bonding. Now alayer-transfer-flow should be performed, as illustrated in FIG. 20, totransfer the pre-processed single crystal P− silicon with N+ layer, ontop of 808.

FIGS. 22A-22H are drawing illustrations of the formation of planar topsource extension transistors. FIG. 22A illustrates the layer transferredon top of a second antifuse layer with its configurable interconnects808 after the smart cut wherein the N+ 2104 is on top. Then the toptransistor source 22B04 and drain 22B06 are defined by etching away theN+ from the region designated for gates 22B02, leaving a thin morelightly doped N+ layer for the future source and drain extensions, andthe isolation region between transistors 22B08. Utilizing an additionalmasking layer, the isolation region 22B08 is defined by an etch all theway to the top of 808 to provide full isolation between transistors orgroups of transistors. Etching away the N+ layer between transistors ishelpful as the N+ layer is conducting. This step is aligned to the topof the 808 layer so that the formed transistors could be properlyconnected to the underlying second antifuse layer with its configurableinterconnects 808 layers. Then a highly conformal Low-Temperature Oxide22C02 (or Oxide/Nitride stack) is deposited and etched resulting in thestructure illustrated in FIG. 22C. FIG. 22D illustrates the structurefollowing a self aligned etch step preparation for gate formation 22D02,thereby forming the source and drain extensions 22D04. FIG. 22Eillustrates the structure following a low temperature microwaveoxidation technique, such as the TEL SPA (Tokyo Electron Limited SlotPlane Antenna) oxygen radical plasma, that grows or deposits a lowtemperature Gate Dielectric 22E02 to serve as the MOSFET gate oxide.Alternatively, a high k metal gate structure may be formed as follows.Following an industry standard HF/SC1/SC2 clean to create an atomicallysmooth surface, a high-k dielectric 22E02 is deposited. Thesemiconductor industry has chosen Hafnium-based dielectrics as theleading material of choice to replace SiO₂ and Silicon oxynitride. TheHafnium-based family of dielectrics includes hafnium oxide and hafniumsilicate/hafnium silicon oxynitride. Hafnium oxide, HfO₂, has adielectric constant twice as much as that of hafnium silicate/hafniumsilicon oxynitride (HfSiO/HfSiON k˜15). The choice of the metal iscritical for the device to perform properly. A metal replacing N⁺ polyas the gate electrode needs to have a work function of ˜4.2 eV for thedevice to operate properly and at the right threshold voltage.Alternatively, a metal replacing P⁺ poly as the gate electrode needs tohave a work function of ˜5.2 eV to operate properly. The TiAl and TiAlNbased family of metals, for example, could be used to tune the workfunction of the metal from 4.2 eV to 5.2 eV.

FIG. 22F illustrates the structure following deposition, mask, and etchof metal gate 22F02. Optionally, to improve transistor performance, atargeted stress layer to induce a higher channel strain may be employed.A tensile nitride layer may be deposited at low temperature to increasechannel stress for the NMOS devices illustrated in FIG. 22. A PMOStransistor may be constructed via the above process flow by changing theinitial P− wafer or epi-formed P− on N+ layer 2104 to an N− wafer or anN− on P+ epi layer; and the N+ layer 2104 to a P+ layer. Then acompressively stressed nitride film would be deposited post metal gateformation to improve the PMOS transistor performance.

Finally a thick oxide 22G02 is deposited and etched preparing thetransistors to be connected as illustrated in FIG. 22G. This flowenables the formation of fully crystallized top MOS transistors thatcould be connected to the underlying multi-metal layer semiconductordevice without exposing the underlying devices and interconnects metalsto high temperature. These transistors could be used as programmingtransistors of the Antifuse on layer 808 or for other functions in a 3Dintegrated circuit. These transistors can be considered “planar MOSFETtransistors,” meaning that current flow in the transistor channel is inthe horizontal direction. These transistors can also be referred to ashorizontal transistors or lateral transistors. An additional advantageof this flow is that the SmartCut H+, or other atomic species, implantstep is done prior to the formation of the MOS transistor gates avoidingpotential damage to the gate function. If needed the top layer of 808could comprise a ‘back-gate’ 22F02-1 whereby gate 22F02 may be alignedto be directly on top of the back-gate 22F02-1 as illustrated in FIG.22H. According to some embodiments of the current invention, during anormal fabrication of the device layers as illustrated in FIG. 8, everynew layer is aligned to the underlying layers using prior alignmentmarks. Sometimes the alignment marks of one layer could be used for thealignment of multiple layers on top of it and sometimes the new layerwill also have alignment marks to be used for the alignment ofadditional layers put on top of it in the following fabrication step. Solayers of 804 are aligned to layers of 802, layers of 806 are aligned tolayers of 804 and so forth. An advantage of the described process flowis that the layer transferred is thin enough so that during thefollowing patterning step as described in connection to FIG. 22B, thetransferred layer is aligned to the alignment marks of layer 808 orthose of underneath layers such as layers 806. Therefore the ‘back-gate’22F02-1 which is part of the top metal layer of 808 would be preciselyunderneath gate 22F02 as all the layers are patterned as being alignedto each other. In this context alignment precision may be highlydependent on the equipment used for the patterning steps. For processesof 45 nm and below, overlay alignment of better than 5 nm is usuallyrequired. The alignment requirement only gets tighter with scaling wheremodern steppers now can do better than 2 nm. This alignment requirementis orders of magnitude better than what could be achieved for TSV based3D IC systems as described in relation to FIG. 12 where even 0.5 micronoverlay alignment is extremely hard to achieve. Connection betweentop-gate and back-gate would be made through a top layer via. This mayallow further reduction of leakage as both the gate 22F02 and theback-gate 22F02-1 could be connected together to better shut off thetransistor 22G20. As well, one could create a sleep mode, a normal speedmode, and fast speed mode by dynamically changing the threshold voltageof the top gated transistor by independently changing the bias of the‘back-gate’ 22F02-1. Additionally, an accumulation mode (fully depleted)MOSFET transistor could be constructed via the above process flow bychanging the initial P− wafer 2102 or epi-formed P− 2106 on N+ layer2104 to an N− wafer or an N− epi layer on N+.

An additional aspect of this technique for forming top transistors isthe size of the via used to connect the top transistors 22G20 to thelayers 808 underneath. The general rule of thumb is that the size of avia should be larger than one tenth the thickness of the layer that thevia is going through. Since the thickness of the layers in thestructures presented in FIG. 12 is usually more than 50 micron, the TSVused in such structures are about 10 micron on the side. The thicknessof the transferred layer in FIG. 22A is less than 100 nm and accordinglythe vias to connect top transistors 22G20 to the layers 808 underneathcould be less than 50 nm on the side. As the process is scaled tosmaller feature sizes, the thickness of the transferred layer andaccordingly the size of the via to connect to the underline structurescould be scaled down. For some advanced processes, the end thickness ofthe transferred layer could be made below 10 nm.

Another alternative for forming the planar top transistors with sourceand drain extensions is to process the prepared wafer of FIG. 21B asshown in FIGS. 29A-29G. FIG. 29A illustrates the layer transferred ontop of the second antifuse layer with its configurable interconnects 808after the smart cut wherein the N+ 2104 is on top. Then the substrate P+source 29B04 contact opening and transistor isolation 29B02 is maskedand etched as shown in FIG. 29B. Utilizing an additional masking layer,the isolation region 29C02 is defined by etch all the way to the top of808 to provide full isolation between transistors or groups oftransistors in FIG. 29C. Etching away the P+ layer between transistorsis helpful as the P+ layer is conducting. Then a Low-Temperature Oxide29C04 is deposited and chemically mechanically polished. Then a thinpolish stop layer 29C06 such as low temperature silicon nitride isdeposited resulting in the structure illustrated in FIG. 29C. Source29D02, drain 29D04 and self-aligned Gate 29D06 may be defined by maskingand etching the thin polish stop layer 29C06 and then a sloped N+ etchas illustrated in FIG. 29D. The sloped (30-90 degrees, 45 is shown) etchor etches may be accomplished with wet chemistry or plasma etchingtechniques. This process forms angular source and drain extensions29D08. FIG. 29E illustrates the structure following deposition anddensification of a low temperature based Gate Dielectric 29E02, oralternately a low temperature microwave plasma oxidation of the siliconsurfaces, to serve as the MOSFET gate oxide, and then deposition of agate material 29E04, such as aluminum or tungsten. Alternatively, ahigh-k metal gate structure may be formed as follows. Following anindustry standard HF/SC1/SC2 cleaning to create an atomically smoothsurface, a high-k dielectric 29E02 is deposited. The semiconductorindustry has chosen Hafnium-based dielectrics as the leading material ofchoice to replace SiO₂ and Silicon oxynitride. The Hafnium-based familyof dielectrics includes hafnium oxide and hafnium silicate/hafniumsilicon oxynitride. Hafnium oxide, HfO₂, has a dielectric constant twiceas much as that of hafnium silicate/hafnium silicon oxynitride(HfSiO/HfSiON k˜15). The choice of the metal is critical for the deviceto perform properly. A metal replacing N⁺ poly as the gate electrodeneeds to have a work function of ˜4.2 eV for the device to operateproperly and at the right threshold voltage. Alternatively, a metalreplacing P⁺ poly as the gate electrode needs to have a work function of˜5.2 eV to operate properly. The TiAl and TiAlN based family of metals,for example, could be used to tune the work function of the metal from4.2 eV to 5.2 eV.

FIG. 29F illustrates the structure following a chemical mechanicalpolishing of the metal gate 29E04 utilizing the nitride polish stoplayer 29C06. A PMOS transistor could be constructed via the aboveprocess flow by changing the initial P− wafer or epi-formed P− on N+layer 2104 to an N− wafer or an N− on P+ epi layer; and the N+ layer2104 to a P+ layer. Similarly, layer 2108 would change from P+ to N+ ifthe substrate contact option was used.

Finally a thick oxide 29G02 is deposited and contact openings are maskedand etched preparing the transistors to be connected as illustrated inFIG. 29G. This thick or any low temperature oxide in this patent may bedeposited via Chemical Vapor Deposition (CVD), Physical Vapor Deposition(PVD), or Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques.This figure also illustrates the layer transfer silicon via 29G04 maskedand etched to provide interconnection of the top transistor wiring tothe lower layer 808 interconnect wiring 29G06. This flow enables theformation of fully crystallized top MOS transistors that may beconnected to the underlying multi-metal layer semiconductor devicewithout exposing the underlying devices and interconnects metals to hightemperature. These transistors may be used as programming transistors ofthe antifuse on layer 808 or for other functions in a 3D integratedcircuit. These transistors can be considered to be “planar MOSFETtransistors”, where current flow in the transistor channel is in thehorizontal direction. These transistors can also be referred to ashorizontal transistors or lateral transistors. An additional advantageof this flow is that the SmartCut H+, or other atomic species, implantstep is done prior to the formation of the MOS transistor gates avoidingpotential damage to the gate function. Additionally, an accumulationmode (fully depleted) MOSFET transistor may be constructed via the aboveprocess flow by changing the initial P− wafer or epi-formed P− on N+layer 2104 to an N− wafer or an N− epi layer on N+.

Another alternative is to preprocess the wafer used for layer transfer2006 as illustrated in FIG. 23. FIG. 23A is a drawing illustration of apre-processed wafer used for a layer transfer. An N− wafer 2302 isprocessed to have a “buried” layer of N+ 2304, by implant andactivation, or by shallow N+ implant and diffusion followed by an N− epigrowth (epitaxial growth). FIG. 23B is a drawing illustration of thepre-processed wafer made ready for a layer transfer by a deposition orgrowth of an oxide 2308 and by an implant of an atomic species, such asH+, preparing the SmartCut cleaving plane 2306 in the lower part of theN+ region. Now a layer-transfer-flow should be performed, as illustratedin FIG. 20, to transfer the pre-processed crystallized N− silicon withN+ layer, on top of the second antifuse layer with its configurableinterconnects 808.

FIGS. 24A-24F are drawing illustrations of the formation of planarJunction Gate Field Effect Transistor (JFET) top transistors. FIG. 24Aillustrates the structure after the layer is transferred on top of 808.So, after the smart cut, the N+ 2304 is on top and now marked as 24A04.Then the top transistor source 24B04 and drain 24B06 are defined byetching away the N+ from the region designated for gates 24B02 and theisolation region between transistors 24B08. This step is aligned to the808 layer so the formed transistors could be properly connected to theunderlying 808 layers. Then an additional masking and etch step isperformed to remove the N− layer between transistors, shown as 24C02,thus providing better transistor isolation as illustrated in FIG. 24C.FIG. 24D illustrates an optional formation of shallow P+ region 24D02for the JFET gate formation. In this option there might be a need forlaser or other method of optical annealing to activate the P+. FIG. 24Eillustrates how to utilize the laser anneal and minimize the heattransfer to layer 808. After the thick oxide deposition 24E02, a layerof Aluminum 24D04, or other light reflecting material, is applied as areflective layer. An opening 24D08 in the reflective layer is masked andetched, allowing the laser light 24D06 to heat the P+ 24D02 implantedarea, and reflecting the majority of the laser energy 24D06 away fromlayer 808. Normally, the open area 24D08 is less than 10% of the totalwafer area. Additionally, a copper layer 24D10, or, alternatively, areflective Aluminum layer or other reflective material, may be formed inthe layer 808 that will additionally reflect any of the laser energy24D08 that might travel to layer 808. Layer 24D10 could also be utilizedas a ground plane or backgate electrically when the formed devices andcircuits are in operation. Certainly, openings in layer 24D10 would bemade through which later thru vias connecting the second top transferredlayer to the layer 808 may be constructed. This same reflective laseranneal or other methods of optical anneal technique might be utilized onany of the other illustrated structures to enable implant activation fortransistor gates in the second layer transfer process flow. In addition,absorptive materials may, alone or in combination with reflectivematerials, also be utilized in the above laser or other method ofoptical annealing techniques. A photonic energy absorbing layer 24E04,such as amorphous carbon of an appropriate thickness, may be depositedor sputtered at low temperature over the area that needs to be laserheated, and then masked and etched as appropriate, as shown in FIG. 24E-1. This allows the minimum laser or other optical energy to beemployed to effectively heat the area to be implant activated, andthereby minimizes the heat stress on the reflective layers 24D04 & 24D10and the base layer 808. FIG. 24F illustrates the structure, followingetching away of the laser reflecting layer 24D04, and the deposition,masking, and etch of a thick oxide 24F04 to open contacts 24F06 and24F02, and deposition and partial etch-back (or Chemical MechanicalPolishing (CMP)) of aluminum (or other metal as required to obtain anoptimal Schottky or ohmic contact at 24F02) to form contacts 24F06 andgate 24F02. If necessary, N+ contacts 24F06 and gate contact 24F02 canbe masked and etched separately to allow a different metal to bedeposited in each to create a Schottky or ohmic contact in the gate24F02 and ohmic connections in the N+ contacts 24F06. The thick oxide24F04 is a non conducting dielectric material also filling the etchedspace 24B08 and 24B09 between the top transistors and could be comprisedfrom other isolating material such as silicon nitride. The toptransistors will therefore end up being surrounded by isolatingdielectric unlike conventional bulk integrated circuits transistors thatare built in single crystal silicon wafer and only get covered by nonconducting isolating material. This flow enables the formation of fullycrystallized top JFET transistors that could be connected to theunderlying multi-metal layer semiconductor device without exposing theunderlying device to high temperature.

Another variation for the previous flow could be in utilizing atransistor technology called pseudo-MOSFET utilizing a molecularmonolayer that is covalently grafted onto the channel region between thedrain and source. This is a process that can be done at relatively lowtemperatures.

Another variation is to preprocess the wafer used for layer transfer2006 of FIG. 20 as illustrated in FIG. 25. FIG. 25A is a drawingillustration of a pre-processed wafer used for a layer transfer. An N−wafer 2502 is processed to have a “buried” layer of N+ 2504, by implantand activation, or by shallow N+ implant and diffusion followed by an N−epi growth (epitaxial growth) 2508. An additional P+ layer 2510 isprocessed on top. This P+ layer 2510 could again be processed, byimplant and activation, or by P+ epi growth. FIG. 25B is a drawingillustration of the pre-processed wafer made ready for a layer transferby a deposition or growth of an oxide 2512 and by an implant of anatomic species, such as H+, preparing the SmartCut cleaving plane 2506in the lower part of the N+ 2504 region. Now a layer-transfer-flowshould be performed, as illustrated in FIG. 20, to transfer thepre-processed single crystal silicon with N+ and N− layers, on top of808.

FIGS. 26A-26E are drawing illustrations of the formation of top planarJFET transistors with back bias or double gate. FIG. 26A illustrates thelayer transferred on top of 808 after the smart cut wherein the N+ 2504is on top. Then the top transistor source 26B04 and drain 26B06 aredefined by etching away the N+ from the region designated for gates26B02 and the isolation region between transistors 26B08. This step isaligned to the 808 layer so that the formed transistors could beproperly connected to the underlying 808 layers. Then a masking and etchstep is performed to remove the N− between transistors 26C12 and toallow contact to the now buried P+ layer 2510. And then a masking andetch step is performed to remove in between transistors 26C09 the buriedP+ layer 2510 for full isolation as illustrated in FIG. 26C. FIG. 26Dillustrates an optional formation of a shallow P+ region 26D02 for gateformation. In this option there might be a need for laser anneal toactivate the P+. FIG. 26E illustrates the structure, followingdeposition and etch or CMP of a thick oxide 26E04, and deposition andpartial etch-back of aluminum (or other metal as required to obtain anoptimal Schottky or ohmic contact at 26E02) contacts 26E06, 26E12 andgate 26E02. If necessary, N+ contacts 26E06 and gate contact 26E02 canbe masked and etched separately to allow a different metal to bedeposited in each to create a Schottky or ohmic contact in the gate26E02 and ohmic connections in the N+ contacts 26E06 & 26E12. The thickoxide 26E04 is a non conducting dielectric material also filling theetched space 26B08 and 26C09 between the top transistors and could becomprised from other isolating material such as silicon nitride. Contact26E12 is to allow a back bias of the transistor or can be connected tothe gate 26E02 to provide a double gate JFET. Alternatively theconnection for back bias could be included in layers 808 connecting tolayer 2510 from underneath. This flow enables the formation of fullycrystallized top ultra thin body planar JFET transistors with back biasor double gate capabilities that may be connected to the underlyingmulti-metal layer semiconductor device without exposing the underlyingdevice to high temperature.

Another alternative is to preprocess the wafer used for layer transfer2006 as illustrated in FIG. 27. FIG. 27A is a drawing illustration of apre-processed wafer used for a layer transfer. An N+ wafer 2702 isprocessed to have “buried” layers by ion implantation and diffusion tocreate a vertical structure to be the building block for NPN (or PNP)transistors. Starting with P layer 2704, then N− layer 2708, and finallyN+ layer 2710 and then activating these layers by heating to a highactivation temperature. FIG. 27B is a drawing illustration of thepre-processed wafer made ready for a layer transfer by a deposition orgrowth of an oxide 2712 and by an implant of an atomic species, such asH+, preparing the SmartCut cleaving plane 2706 in the N+region. Now alayer-transfer-flow should be performed, as illustrated in FIG. 20, totransfer the pre-processed layers, on top of 808.

FIGS. 28A-28E are drawing illustrations of the formation of top bipolartransistors. FIG. 28A illustrates the layer transferred on top of thesecond antifuse layer with its configurable interconnects 808 after thesmart cut wherein the N+ 28A02 which was part of 2702 is now on top.Effectively at this point there is a giant transistor overlaying theentire wafer. The following steps are multiple etch steps as illustratedin FIG. 28B to 28D where the giant transistor is cut and defined asneeded and aligned to the underlying layers 808. These etch steps alsoexpose the different layers comprising the bipolar transistors to allowcontacts to be made with the emitter 2806, base 2802 and collector 2808,and etching all the way to the top oxide of 808 to isolate betweentransistors as 2809 in FIG. 28D. Then the entire structure may becovered with a Low Temperature Oxide 2804, the oxide planarized withCMP, and then mask & etch contacts to the emitter, base andcollectors—2806, 2802 and 2808 as in FIG. 28E. The oxide 2804 is a nonconducting dielectric material also filling the etched space 2809between the top transistors and could be comprised from other isolatingmaterial such as silicon nitride. This flow enables the formation offully crystallized top bipolar transistors that could be connected tothe underlying multi-metal layer semiconductor device without exposingthe underlying device to high temperature.

Another class of devices that may be constructed partly at hightemperature before layer transfer to a substrate with metalinterconnects and then completed at low temperature after layer transferis a junction-less transistor. For example, in deep sub micron processescopper metallization is utilized, so a high temperature would be above400° C., whereby a low temperature would be 400° C. and below. Thejunction-less transistor structure avoids the sharply graded junctionsrequired as silicon technology scales, and provides the ability to havea thicker gate oxide for an equivalent performance when compared to atraditional MOSFET transistor. The junction-less transistor is alsoknown as nanowire transistors without junctions, or gated resistor, ornanowire transistor as described in a paper by Jean-Pierre Colinge, et.al., published in Nature Nanotechnology on Feb. 21, 2010. Thejunction-less transistors discussed below are constructed whereby thetransistor channel is a thin solid piece of evenly and heavily dopedsingle crystal silicon. One of the challenges of a junction-lesstransistor device is turning the channel off with minimal leakage at azero gate bias. To enhance gate control over the transistor channel, thechannel may be doped unevenly; whereby the heaviest doping is closest tothe gate or gates and the channel doping is lighter the farther awayfrom the gate electrode. One example would be where the center of a 2,3, or 4 gate sided junction-less transistor channel is more lightlydoped than the edges. This may enable much lower off currents for thesame gate work function and control. FIGS. 52 A and 52B show, onlogarithmic and linear scales respectively, simulated drain to sourcecurrent Ids as a function of the gate voltage Vg for variousjunction-less transistor channel dopings where the total thickness ofthe n-channel is 20 nm. Two of the four curves in each figure correspondto evenly doping the 20 nm channel thickness to 1E17 and 1E18 atoms/cm3,respectively. The remaining two curves show simulation results where the20 nm channel has two layers of 10 nm thickness each. In the legenddenotations for the remaining two curves, the first number correspondsto the 10 nm portion of the channel that is the closest to the gateelectrode. For example, the curve D=1E18/1E17 shows the simulatedresults where the 10 nm channel portion doped at 1E18 is closest to thegate electrode while the 10 nm channel portion doped at 1E17 is farthestaway from the gate electrode. In FIG. 52 A, curves 5202 and 5204correspond to doping patterns of D=1E18/1E17 and D=1E17/1E18,respectively. According to FIG. 52A, at a Vg of 0 volts, the off currentfor the doping pattern of D=1E18/1E17 is approximately 50 times lowerthan that of the reversed doping pattern of D=1E17/1E18. Likewise, inFIG. 52 B, curves 5206 and 5208 correspond to doping patterns ofD=1E18/1E17 and D=1E17/1E18, respectively. FIG. 52B shows that at a Vgof 1 volt, the Ids of both doping patterns are within a few percent ofeach other. The transistor channel may be constructed with graded ordiscrete layers of doping. The channel may be constructed with materialsother than doped single crystal silicon, such as polysilicon, or othersemi-conducting, insulating, or conducting material, and may be incombination with other layers of similar or different material. Forexample, the center of the channel may comprise a layer of oxide, or oflightly doped silicon, and the edges more heavily doped single crystalsilicon. This may enhance the gate control effectiveness for the offstate of the resistor, and may also increase the on-current due tostrain effects on the other layer or layers in the channel. Straintechniques may also be employed from covering and insulator materialabove, below, and surrounding the transistor channel and gate. Latticemodifiers may also be employed to strain the silicon, such as anembedded SiGe implantation and anneal. The cross section of thetransistor channel may be rectangular, circular, or oval shaped, toenhance the gate control of the channel.

To construct an n-type 4 gate sided junction-less transistor a siliconwafer is preprocessed to be used for layer transfer 2006 as illustratedin FIG. 56A-56G. These processes may be at temperatures above 400 degreeCentigrade as the layer transfer to the processed substrate with metalinterconnects has yet to be done. As illustrated in FIG. 56A, an N−wafer 5600 is processed to have a layer of N+ 5604, by implant andactivation, or by an N+ epitaxial growth. A gate oxide 5602 may be grownbefore or after the implant, to a thickness approximately half of thedesired final top-gate oxide thickness. FIG. 56B is a drawingillustration of the pre-processed wafer made ready for a layer transferby an implant 5606 of an atomic species, such as H+, preparing the“cleaving plane” 5608 in the N− region 5600 of the substrate and plasmaor other surface treatments to prepare the oxide surface for wafer oxideto oxide bonding. Another wafer is prepared as above and the two arebonded as illustrated in FIG. 56C, to transfer the pre-processed singlecrystal N− silicon with N+ layer and half gate oxide, on top of asimilarly pre-processed, but not cleave implanted, wafer. The top waferis cleaved and removed from the bottom wafer. This top wafer may nowalso be processed and reused for more layer transfers to form theresistor layer. The remaining top wafer N− and N+ layers are chemicallyand mechanically polished to a very thin N+ silicon layer 5610 asillustrated in FIG. 56D. This thin N+ doped silicon layer 5610 is on theorder of 5 to 40 nm thick and will eventually form the resistor thatwill be gated on four sides. The two ‘half’ gate oxides 5602 are nowatomically bonded together to form the top gate oxide 5612. A hightemperature anneal may be performed to remove any residual oxide orinterface charges. Alternatively, the wafer that becomes the bottomwafer in FIG. 56C may be constructed wherein the N+ layer 5604 may beformed with heavily doped polysilicon and the half gate oxide 5602 isdeposited or grown prior to layer transfer. The bottom wafer N+ siliconor polysilicon layer will eventually become the top-gate of thejunction-less transistor.

As illustrated in FIGS. 56E to 56G, the wafer is conventionallyprocessed, at temperatures higher than 400° C. as necessary, inpreparation to layer transfer the junction-less transistor structure tothe processed ‘house’ wafer 808. A thin oxide may be grown to protectthe thin resistor silicon 5610 layer top, and then long and parallelwires 5614 of repeated pitch of the thin resistor layer are masked andetched as illustrated in FIG. 56E and then the photoresist is removed.The thin oxide is striped in a dilute hydrofluoric acid (HF) solutionand a conventional gate oxide 5616 is grown and polysilicon 5618, dopedor undoped, is deposited as illustrated in FIG. 56F. The polysilicon ischemically and mechanically polished (CMP'ed) flat and a thin oxide 5620is grown or deposited to facilitate a low temperature oxide to oxidewafer bonding in the next step. The polysilicon 5618 may be implantedfor additional doping either before or after the CMP. This polysiliconwill eventually become the bottom and side gates of the junction-lesstransistor. FIG. 56G is a drawing illustration of the wafer being madeready for a layer transfer by an implant 5606 of an atomic species, suchas H+, preparing the “cleaving plane” 5608 in the N− region 5600 of thesubstrate and plasma or other surface treatments to prepare the oxidesurface for wafer oxide to oxide bonding. The acceptor wafer 808 withlogic transistors and metal interconnects is prepared for a lowtemperature oxide to oxide wafer bond with surface treatments of the topoxide and the two are bonded as illustrated in FIG. 56H. The top donorwafer is cleaved and removed from the bottom acceptor wafer 808 and thetop N− substrate is chemically and mechanically polished (CMP'ed) intothe N+ layer 5604 to form the top gate layer of the junction-lesstransistor. A metal interconnect layer 5622 in the house 808 is alsoillustrated in FIG. 56H.

FIG. 56I is an orthogonal illustration of the wafer at the same step asFIG. 56H. The N+ layer 5604, which will eventually form the top gate ofthe resistor, and the top gate oxide 5612 will gate one side of theresistor line 5614, and the bottom and side gate oxide 5616 with thepolysilicon bottom and side gate 5618 will gate the other three sides ofthe resistor 5614. The logic house wafer 808 has a top oxide layer 5614that also encases the top metal interconnect pad 5622. A polish stoplayer 5626 of a material such as oxide and silicon nitride is deposited,and isolation openings 5628 are masked and etched to the depth of thehouse 808 oxide 5624 to fully isolate transistors. The isolationopenings 5628 are filled with a low temperature gap fill oxide, andchemically and mechanically polished (CMP'ed) flat as illustrated inFIG. 56J. The top gate 5630 is masked and etched as illustrated in FIG.56K, and then the etched openings 5628 are filled with a low temperaturegap fill oxide deposition, and chemically and mechanically (CMP'ed)polished flat, then an additional oxide layer is deposited to enableinterconnect metal isolation. The contacts are masked and etched asillustrated in FIG. 56L. The gate contact 5632 is masked and etched, sothat the contact etches through the top gate layer 5630, and during themetal opening mask and etch process, the top 5630 and bottom 5618 gatesare connected together. The contacts 5634 to the two terminals of theresistor layer 5614 are masked and etched. And then the thru vias 5636to the house wafer 808 and metal interconnect 5622 are masked andetched. The metal lines 5640 are mask defined and etched, filled withbarrier metals and copper interconnect, and CMP'ed in a normal DualDamascene interconnect scheme, thereby completing the contact via 5632connections to the top 5630 and bottom 5618 gates, the two terminals5634 of the resistor layer 5614, and the thru via to the house wafer 808metal interconnect 5622, as illustrated in FIG. 56M. This flow enablesthe formation of a fully crystallized 4-gate sided junction-lesstransistor that could be connected to the underlying multi-metal layersemiconductor device without exposing the underlying devices to hightemperature.

Alternatively, an n-type 3-gate sided junction-less transistor may beconstructed as follows in FIGS. 57 A to 57G. A silicon wafer ispreprocessed to be used for layer transfer 2006 as illustrated in FIGS.57A and 57B. These processes may be at temperatures above 400° C. as thelayer transfer to the processed substrate with metal interconnects hasyet to be done. As illustrated in FIG. 57A, an N− wafer 5700 isprocessed to have a layer of N+ 5704, by implant and activation, or byan N+ epitaxial growth. A screen oxide 5702 may be grown before theimplant to protect the silicon from implant contamination and to providean oxide surface for later wafer to wafer bonding. FIG. 57B is a drawingillustration of the pre-processed wafer made ready for a layer transferby an implant 5707 of an atomic species, such as H+, preparing the“cleaving plane” 5708 in the N− region 5700 of the donor substrate andplasma or other surface treatments to prepare the oxide surface forwafer oxide to oxide bonding. The acceptor wafer or house 808 with logictransistors and metal interconnects is prepared for a low temperatureoxide to oxide wafer bond with surface treatments of the top oxide andthe two are bonded as illustrated in FIG. 57C. The top donor wafer iscleaved and removed from the bottom acceptor wafer 808 and the top N−substrate is chemically and mechanically polished (CMP'ed) into the N+layer 5704 to form the top gate layer of the junction-less transistor. Ametal interconnect layer 5706 in the acceptor wafer or house 808 is alsoillustrated in FIG. 57C. For illustration simplicity and clarity, thedonor wafer oxide layer 5702 will not be drawn independent of theacceptor wafer or house 808 oxide.

A thin oxide may be grown to protect the thin transistor silicon 5704layer top, and then the transistor channel elements 5708 are masked andetched as illustrated in FIG. 57D and then the photoresist is removed.The thin oxide is striped in a dilute HF solution and a low temperaturebased Gate Dielectric may be deposited and densified to serve as thejunction-less transistor gate oxide 5710. Alternatively, a lowtemperature microwave plasma oxidation of the silicon surfaces may serveas the junction-less transistor gate oxide 5710. Then deposition of alow temperature gate material 5712, such as doped or undoped amorphoussilicon as illustrated in FIG. 57E, may be performed. Alternatively, ahigh-k metal gate structure may be formed as described previously. Thegate material 5712 is then masked and etched to define the top and sidegates 5714 of the transistor channel elements 5708 in a crossing manner,generally orthogonally. Then the entire structure may be covered with aLow Temperature Oxide 5716, the oxide planarized with chemicalmechanical polishing, and then contacts and metal interconnects may bemasked and etched as illustrated FIG. 57G. The gate contact 5720connects to the gate 5714. The two transistor channel terminal contacts5722 independently connect to transistor element 5708 on each side ofthe gate 5714. The thru via 5724 connects the transistor layermetallization to the acceptor wafer or house 808 at interconnect 5706.This flow enables the formation of fully crystallized 3-gate sidedjunction-less transistor that may be formed and connected to theunderlying multi-metal layer semiconductor device without exposing theunderlying devices to a high temperature.

Alternatively, an n-type 3-gate sided thin-side-up junction-lesstransistor may be constructed as follows in FIGS. 58 A to 58G. Athin-side-up junction-less transistor may have the thinnest dimension ofthe channel cross-section facing up, that face being parallel to thesilicon base substrate surface. Previously and subsequently describedjunction-less transistors may have the thinnest dimension of the channelcross section perpendicular to the silicon base substrate surface Asilicon wafer is preprocessed to be used for layer transfer 2006 asillustrated in FIGS. 58A and 58B. These processes may be at temperaturesabove 400° C. as the layer transfer to the processed substrate withmetal interconnects has yet to be done. As illustrated in FIG. 58A, anN− wafer 5800 is processed to have a layer of N+ 5804, by ionimplantation and activation, or by an N+ epitaxial growth. A screenoxide 5802 may be grown before the implant to protect the silicon fromimplant contamination and to provide an oxide surface for later wafer towafer bonding. FIG. 58B is a drawing illustration of the pre-processedwafer made ready for a layer transfer by an implant 5806 of an atomicspecies, such as H+, preparing the “cleaving plane” 5808 in the N−region 5700 of the donor substrate, and plasma or other surfacetreatments to prepare the oxide surface for wafer oxide to oxidebonding. The acceptor wafer 808 with logic transistors and metalinterconnects is prepared for a low temperature oxide to oxide waferbond with surface treatments of the top oxide and the two are bonded asillustrated in FIG. 58C. The top donor wafer is cleaved and removed fromthe bottom acceptor wafer 808 and the top N− substrate is chemically andmechanically polished (CMP'ed) into the N+ layer 5804 to form thejunction-less transistor channel layer. FIG. 58C also illustrates thedeposition of a CMP and plasma etch stop layer 5805, such as lowtemperature SiN on oxide, on top of the N+ layer 5804. A metalinterconnect layer 5806 in the acceptor wafer or house 808 is also shownin FIG. 58C. For illustration simplicity and clarity, the donor waferoxide layer 5802 will not be drawn independent of the acceptor wafer orhouse 808 oxide.

The transistor channel elements 5808 are masked and etched asillustrated in FIG. 58D and then the photoresist is removed. A lowtemperature based Gate Dielectric may be deposited and densified toserve as the junction-less transistor gate oxide 5810. Alternatively, alow temperature microwave plasma oxidation of the silicon surfaces mayserve as the junction-less transistor gate oxide 5810. Then depositionof a low temperature gate material 5812, such as P+ doped amorphoussilicon as illustrated in FIG. 58E, may be performed. Alternatively, ahigh-k metal gate structure may be formed as described previously. Thegate material 5812 is then masked and etched to define the top and sidegates 5814 of the transistor channel elements 5808 in a crossing manner,generally orthogonally. Then the entire structure may be covered with aLow Temperature Oxide 5816, the oxide planarized with chemicalmechanical polishing (CMP), and then contacts and metal interconnectsmay be masked and etched as illustrated FIG. 58G. The gate contact 5820connects to the resistor gate 5814. The two transistor channel terminalcontacts 5822 per transistor independently connect to the transistorchannel element 5808 on each side of the gate 5814. The thru via 5824connects the transistor layer metallization to the acceptor wafer orhouse 808 interconnect 5806. This flow enables the formation of fullycrystallized 3-gate sided thin-side-up junction-less transistor that maybe formed and connected to the underlying multi-metal layersemiconductor device without exposing the underlying devices to a hightemperature.

Alternatively, a two layer n-type 3-gate sided junction-less transistormay be constructed as shown in FIGS. 61A to 61I. This structure mayimprove the source and drain contact resistance by providing for ahigher doping at the contact surface than the channel. Additionally,this structure may be utilized to create a two layer channel wherein thelayer closest to the gate is more highly doped. A silicon wafer may bepreprocessed for layer transfer 2006 as illustrated in FIGS. 61A and61B. These preprocessings may be performed at temperatures above 400° C.as the layer transfer to the processed substrate with metalinterconnects has yet to be done. As illustrated in FIG. 61A, an N−wafer 5700 is processed to have two layers of N+, the top layer 6104with a lower doping concentration than the bottom N+ layer 6103, by animplant and activation, or an N+ epitaxial growth, or combinationsthereof. A screen oxide 6102 may be grown before the implant to protectthe silicon from implant contamination and to provide an oxide surfacefor later wafer-to-wafer bonding. FIG. 61B is a drawing illustration ofthe pre-processed wafer for a layer transfer by an implant 6107 of anatomic species, such as H+, preparing the “cleaving plane” 6108 in theN− region 6100 of the donor substrate and plasma or other surfacetreatments to prepare the oxide surface for wafer oxide to oxidebonding. The acceptor wafer or house 808 with logic transistors andmetal interconnects is prepared for a low temperature oxide-to-oxidewafer bond with surface treatments of the top oxide and the two arebonded as illustrated in FIG. 61C. The top donor wafer is cleaved andremoved from the bottom acceptor wafer 808 and the top N− substrate ischemically and mechanically polished (CMP'ed) into the more highly dopedN+ layer 6103. An etch hard mask layer of low temperature siliconnitride 6105 may be deposited on the surface of 6103, including a thinoxide stress buffer layer. A metal interconnect layer 6106 in theacceptor wafer or house 808 is also illustrated in FIG. 61C. Forillustration simplicity and clarity, the donor wafer oxide layer 6102will not be drawn independent of the acceptor wafer or house 808 oxide.

The source and drain connection areas may be masked, the silicon nitride6105 layer may be etched, and the photoresist may be stripped. A partialor full silicon plasma etch may be performed, or a low temperatureoxidation and then Hydrofluoric Acid etch of the oxide may be performed,to thin layer 6105. FIG. 61D illustrates where a two-layer channel, asdescribed and simulated above, formed by thinning layer 6103 with theabove etch process to almost complete removal, leaving some of layer6103 remaining on top of 6104. A complete removal of the top channellayer may also be performed. This etch process may also be utilized toadjust for wafer-to-wafer CMP variations of the remaining donor waferlayers, such as 6100 and 6103, after the layer transfer cleave. FIG. 61Eillustrates the photoresist definition of the source, drain, and channelof the junction-less transistor. The exposed silicon remaining on layer6104, as illustrated in FIG. 61F, may be plasma etched and thephotoresist may be removed. This process may provide for an isolationbetween devices and may define the channel width of the junction-lesstransistor channel 6108. A low temperature based Gate Dielectric may bedeposited and densified to serve as the junction-less transistor gateoxide 6110 as illustrated in FIG. 61G. Alternatively, a low temperaturemicrowave plasma oxidation of the silicon surfaces may provide thejunction-less transistor gate oxide 6110. Then deposition of a lowtemperature gate material 6112, such as, for example, doped or undopedamorphous silicon, may be performed, as illustrated in FIG. 61G.Alternatively, a high-k metal gate structure may be formed as describedpreviously. The gate material 6112 may then be masked and etched todefine the top and side gates 6114 of the transistor channel elements6108 in a crossing manner, generally orthogonally, as illustrated inFIG. 61H. Then the entire structure may be covered with a LowTemperature Oxide 6116, the oxide may be planarized by chemicalmechanical polishing. Then contacts and metal interconnects may bemasked and etched as illustrated FIG. 61I. The gate contact 6120 may beconnected to the gate 6114. The two transistor channel terminal contacts6122 may be independently connected to the heavier doped layer 6103 andthen to transistor channel element 6108 on each side of the gate 6114.The thru via 6124 may connect the junction-less transistor layermetallization to the acceptor wafer or house 808 at interconnect 6106.This flow may enable the formation of fully crystallized two layera-gate sided junction-less transistor that may be formed and connectedto the underlying multi-metal layer semiconductor device withoutexposing the underlying devices to a high temperature.

Alternatively, a 1-gate sided junction-less transistor can beconstructed as shown in FIG. 65A-C. A thin layer of heavily dopedsilicon 6503 may be transferred on top of the acceptor wafer or house808 using layer transfer techniques described previously wherein thedonor wafer oxide layer 6501 may be utilized to form an oxide to oxidebond with the top of the acceptor wafer or house 808. The transferreddoped layer 6503 may be N+ doped for an n-channel junction-lesstransistor or may be P+ doped for a p-channel junction-less transistor.Oxide isolation 6506 may be formed by masking and etching the N+ layer6503 and subsequent deposition of a low temperature oxide which may bechemical mechanically polished to the channel silicon 6503 thickness.The channel thickness 6503 may also be adjusted at this step. Asillustrated in FIG. 65 B, a low temperature gate dielectric 6504 andgate metal 6505 are deposited or grown as previously described and thenphoto-lithographically defined and etched. A low temperature oxide 6508may then be deposited, which also may provide a mechanical stress on thechannel for improved carrier mobility. Contact openings 6510 may then beopened to various terminals of the junction-less transistor as shown inFIG. 65.

A family of vertical devices can also be constructed as top transistorsthat are precisely aligned to the underlying pre-fabricated acceptorwafer or house 808. These vertical devices have implanted and annealedsingle crystal silicon layers in the transistor by utilizing the“SmartCut” layer transfer process that does not exceed the temperaturelimit of the underlying pre-fabricated structure. For example, verticalstyle MOSFET transistors, floating gate flash transistors, floating bodyDRAM, thyristor, bipolar, and Schottky gated JFET transistors, as wellas memory devices, can be constructed. Junction-less transistors mayalso be constructed in a similar manner. The gates of the verticaltransistors or resistors may be controlled by memory or logic elementssuch as MOSFET, DRAM, SRAM, floating flash, anti-fuse, floating bodydevices, etc. that are in layers above or below the vertical device, orin the same layer. As an example, a vertical gate-all-around n-MOSFETtransistor construction is described below.

The donor wafer is preprocessed for the general layer transfer process2006 of FIG. 20 is illustrated in FIG. 39. FIG. 39A is a drawingillustration of a pre-processed wafer used for a layer transfer. A P−wafer 3902 is processed to have a “buried” layer of N+ 3904, by implantand activation, or by shallow N+ implant and diffusion followed by an P−epi growth (epitaxial growth) 3906. An additional N+ layer 3908 isprocessed on top. This N+ layer 2510 could again be processed, byimplant and activation, or by N+ epi growth. FIG. 39B is a drawingillustration of the pre-processed wafer made ready for a conductive bondlayer transfer by a deposition of a conductive barrier layer 3910 suchas TiN or TaN and by an implant of an atomic species, such as H+,preparing the SmartCut cleaving plane 3912 in the lower part of the N+3904 region. The acceptor wafer is also prepared with an oxide pre-cleanand deposition of a conductive barrier layer 3916 and Al and Ge layersto form a Ge—Al eutectic bond 3914 during a thermo-compressive wafer towafer bonding as part of the layer-transfer-flow, thereby transferringthe pre-processed single crystal silicon with N+ and P− layers, on topof 808, as illustrated in FIG. 39C. Thus, a conductive path is made fromthe house 808 top metal layers 3920 to the now bottom N+ layer 3908 ofthe transferred donor wafer. Alternatively, the Al—Ge eutectic layer3914 may be made with copper and a copper-to-copper or copper-to-barrierlayer thermo-compressive bond is formed Likewise, a conductive path fromdonor wafer to house 808 may be made by house top metal lines 3920 ofcopper with barrier metal thermo-compressively bonded with the copperlayer 3910 directly, where a majority of the bonded surface is donorcopper to house oxide bonds and the remainder of the surface is donorcopper to house 808 copper and barrier metal bonds.

FIGS. 40A-40I are drawing illustrations of the formation of a verticalgate-all-around n-MOSFET top transistor. FIG. 40A illustrates the firststep after the conductive path layer transfer described above of adeposition of a CMP and plasma etch stop layer 4002, such as lowtemperature SiN, on top of the top N+ layer 3904. For simplicity, thebarrier clad Al—Ge eutectic layers 3910, 3914, and 3916 are representedby one illustrated layer 4004. Similarly, FIGS. 40B-H are drawn as anorthographic projection to illustrate some process and topographicaldetails. The transistor illustrated is square shaped when viewed fromthe top, but may be constructed in various rectangular shapes to providedifferent transistor widths and gate control effects. In addition, thesquare shaped transistor illustrated may be intentionally formed as acircle when viewed from the top and hence form a vertical cylindershape, or it may become that shape during processing subsequent toforming the vertical towers. The vertical transistor towers 4006 aremask defined and then plasma/Reactive-ion Etching (RIE) etched thru theChemical Mechanical Polishing (CMP) stop layer 4004, N+ layers 3904 and3908, the P− layer 3906, the metal bonding layer 4004, and into thehouse 808 oxide, and then the photoresist is removed as illustrated inFIG. 40B. This definition and etch now creates N-P-N stacks that areelectrically isolated from each other yet the bottom N+ layer 3908 iselectrically connected to the house metal layer 3920. The area betweenthe towers is partially filled with oxide 4010 via a Spin On Glass (SPG)spin, cure, and etch back sequence as illustrated in FIG. 40C.Alternatively, a low temperature CVD gap fill oxide may be deposited,then Chemically Mechanically Polished (CMP'ed) flat, and thenselectively etched back to achieve the same shape 4010 as shown in FIG.40C. The level of the oxide 4010 is constructed such that a small amountof the bottom N+ tower layer 3908 is not covered by oxide.Alternatively, this step may also be accomplished by a conformal lowtemperature oxide CVD deposition and etch back sequence, creating aspacer profile coverage of the bottom N+ tower layer 3908. Next, thesidewall gate oxide 4014 is formed by a low temperature microwaveoxidation technique, such as the TEL SPA (Tokyo Electron Limited SlotPlane Antenna) oxygen radical plasma, stripped by wet chemicals such asdilute HF, and grown again 4014 as illustrated in FIG. 40D. The gateelectrode is then deposited, such as a conformal doped amorphous siliconlayer 4018, and the gate mask photoresist 4020 may be defined asillustrated in FIG. 40E. The gate layer 4018 is etched such that aspacer shaped gate 4022 remains in regions not covered by thephotoresist 4020, the full thickness gate layer 4024 remains under theresist, and the gate layer is also fully cleared from between the towersand then the photoresist is stripped as illustrated in FIG. 40F. Thisminimizes the gate to drain overlap and provides a clear contactconnection to the gate electrode. The spaces between the towers arefilled and the towers are covered with oxide 4030 by low temperature gapfill deposition and CMP as illustrated in FIG. 40G. In FIG. 40H, the viacontacts 4034 to the tower N+ 3904 are masked and etched, and then thevia contacts 4036 to the gate electrode poly 4024 are masked and etch.The metal lines 4040 are mask defined and etched, filled with barriermetals and copper interconnect, and CMP'd in a normal Dual Damasceneinterconnect scheme, thereby completing the contact via connections tothe tower N+ 3904 and the gate electrode 4024 as illustrated in FIG.40I.

This flow enables the formation of fully crystallized silicon top MOStransistors that are connected to the underlying multi-metal layersemiconductor device without exposing the underlying devices andinterconnect metals to high temperature. These transistors could be usedas programming transistors of the Antifuse on layer 808 or as a passtransistor for logic or FPGA use, or for additional uses in a 3Dsemiconductor device.

Additionally, a vertical gate all around junction-less transistor may beconstructed as illustrated in FIGS. 54 and 55. The donor wafer ispreprocessed for the general layer transfer process 2006 of FIG. 20 isillustrated in FIG. 54. FIG. 54A is a drawing illustration of apre-processed wafer used for a layer transfer. An N− wafer 5402 isprocessed to have a layer of N+ 5404, by ion implantation andactivation, or an N+ epitaxial growth. FIG. 54B is a drawingillustration of the pre-processed wafer made ready for a conductive bondlayer transfer by a deposition of a conductive barrier layer 5410 suchas TiN or TaN and by an implant of an atomic species, such as H+,preparing the SmartCut cleaving plane 5412 in the lower part of the N+5404 region. The acceptor wafer or house 808 is also prepared with anoxide pre-clean and deposition of a conductive barrier layer 5416 and Aland Ge layers to form a Ge—Al eutectic bond 5414 during athermo-compressive wafer to wafer bonding as part of thelayer-transfer-flow, thereby transferring the pre-processed singlecrystal silicon of FIG. 54B with an N+ layer 5404, on top of acceptorwafer or house 808, as illustrated in FIG. 54C. The N+ layer 5404 may bepolished to remove damage from the cleaving procedure. Thus, aconductive path is made from the acceptor wafer or house 808 top metallayers 5420 to the N+ layer 5404 of the transferred donor wafer.Alternatively, the Al—Ge eutectic layer 5414 may be made with copper anda copper-to-copper or copper-to-barrier layer thermo-compressive bond isformed. Likewise, a conductive path from donor wafer to acceptor waferor house 808 may be made by house top metal lines 5420 of copper withassociated barrier metal thermo-compressively bonded with the copperlayer 5410 directly, where a majority of the bonded surface is donorcopper to house oxide bonds and the remainder of the surface is donorcopper to acceptor wafer or house 808 copper and barrier metal bonds.

FIGS. 55A-55I are drawing illustrations of the formation of a verticalgate-all-around junction-less transistor utilizing the abovepreprocessed acceptor wafer or house 808 of FIG. 54C. FIG. 55Aillustrates the deposition of a CMP and plasma etch stop layer 5502,such as low temperature SiN, on top of the N+ layer 5504. Forsimplicity, the barrier clad Al—Ge eutectic layers 5410, 5414, and 5416of FIG. 54C are represented by one illustrated layer 5500. Similarly,FIGS. 55B-H are drawn as an orthographic projection to illustrate someprocess and topographical details. The junction-less transistorillustrated is square shaped when viewed from the top, but may beconstructed in various rectangular shapes to provide differenttransistor channel thicknesses, widths, and gate control effects. Inaddition, the square shaped transistor illustrated may be intentionallyformed as a circle when viewed from the top and hence form a verticalcylinder shape, or it may become that shape during processing subsequentto forming the vertical towers. The vertical transistor towers 5506 aremask defined and then plasma/Reactive-ion Etching (RIE) etched thru theChemical Mechanical Polishing (CMP) stop layer 5502, N+ transistorchannel layer 5504, the metal bonding layer 5500, and into the acceptorwafer or house 808 oxide, and then the photoresist is removed, asillustrated in FIG. 55B. This definition and etch now creates N+transistor channel stacks that are electrically isolated from each otheryet the bottom of N+ layer 5404 is electrically connected to the housemetal layer 5420. The area between the towers is then partially filledwith oxide 5510 via a Spin On Glass (SPG) spin, low temperature cure,and etch back sequence as illustrated in FIG. 55C. Alternatively, a lowtemperature CVD gap fill oxide may be deposited, then ChemicallyMechanically Polished (CMP'ed) flat, and then selectively etched back toachieve the same shaped 5510 as shown in FIG. 55C. Alternatively, thisstep may also be accomplished by a conformal low temperature oxide CVDdeposition and etch back sequence, creating a spacer profile coverage ofthe N+ resistor tower layer 5504. Next, the sidewall gate oxide 5514 isformed by a low temperature microwave oxidation technique, such as theTEL SPA (Tokyo Electron Limited Slot Plane Antenna) oxygen radicalplasma, stripped by wet chemicals such as dilute HF, and grown again5514 as illustrated in FIG. 55D. The gate electrode is then deposited,such as a P+ doped amorphous silicon layer 5518, then ChemicallyMechanically Polished (CMP'ed) flat, and then selectively etched back toachieve the shape 5518 as shown in FIG. 55E, and then the gate maskphotoresist 5520 may be defined as illustrated in FIG. 55E. The gatelayer 5518 is etched such that the gate layer is fully cleared frombetween the towers and then the photoresist is stripped as illustratedin FIG. 55F. The spaces between the towers are filled and the towers arecovered with oxide 5530 by low temperature gap fill deposition, CMP,then another oxide deposition as illustrated in FIG. 55G. In FIG. 55H,the contacts 5534 to the transistor channel tower N+ 5504 are masked andetched, and then the contacts 5518 to the gate electrode 5518 are maskedand etch. The metal lines 5540 are mask defined and etched, filled withbarrier metals and copper interconnect, and CMP'ed in a normal DualDamascene interconnect scheme, thereby completing the contact viaconnections to the transistor channel tower N+ 5504 and the gateelectrode 5518 as illustrated in FIG. 55I.

This flow enables the formation of fully crystallized silicon topvertical junction-less transistors that are connected to the underlyingmulti-metal layer semiconductor device without exposing the underlyingdevices and interconnect metals to high temperature. These junction-lesstransistors may be used as programming transistors of the Antifuse onacceptor wafer or house 808 or as a pass transistor for logic or FPGAuse, or for additional uses in a 3D semiconductor device.

Recessed Channel Array Transistors (RCATs) may be another transistorfamily that can utilize layer transfer and etch definition to constructa low-temperature monolithic 3D Integrated Circuit. Two types of RCATdevice structures are shown in FIG. 66. These were described by J. Kim,et al. at the Symposium on VLSI Technology, in 2003 and 2005. Note thatthis prior art from Kim, et al. are for a single layer of transistorsand did not use any layer transfer techniques. Their work also usedhigh-temperature processes such as source-drain activation anneals,wherein the temperatures were above 400° C. In contrast, someembodiments of the current invention employ this transistor family in atwo-dimensional plane.

A layer stacking approach to construct 3D integrated circuits withstandard RCATs is illustrated in FIG. 67A-F. For an n-channel MOSFET, ap− silicon wafer 6700 may be the starting point. A buried layer of n+ Si6702 may then be implanted as shown in FIG. 67A, resulting in a layer ofp− 6703 that is at the surface of the donor wafer. An alternative is toimplant a shallow layer of n+ Si and then epitaxially deposit a layer ofp− Si 6703. To activate dopants in the n+ layer 6702, the wafer may beannealed, with standard annealing procedures such as thermal, or spike,or laser anneal. An oxide layer 6701 may be grown or deposited, asillustrated in FIG. 67B. Hydrogen is implanted into the wafer 6704 toenable “smart cut” process, as indicated in FIG. 67B. A layer transferprocess may be conducted to attach the donor wafer in FIG. 67B to apre-processed circuits acceptor wafer 808 as illustrated in FIG. 67C.The implanted hydrogen layer 6704 may now be utilized for cleaving awaythe remainder of the wafer 6700. After the cut, chemical mechanicalpolishing (CMP) may be performed. Oxide isolation regions 6705 may beformed and an etch process may be conducted to form the recessed channel6706 as illustrated in FIG. 67D. This etch process may be furthercustomized so that corners are rounded to avoid high field issues. Agate dielectric 6707 may then be deposited, either through atomic layerdeposition or through other low-temperature oxide formation proceduresdescribed previously. A metal gate 6708 may then be deposited to fillthe recessed channel, followed by a CMP and gate patterning asillustrated in FIG. 67E. A low temperature oxide 6709 may be depositedand planarized by CMP. Contacts 6710 may be formed to connect to allelectrodes of the transistor as illustrated in FIG. 67F. This flowenables the formation of a low temperature RCAT monolithically on top ofpre-processed circuitry 808. A p-channel MOSFET may be formed with ananalogous process. The p and n channel RCATs may be utilized to form amonolithic 3D CMOS circuit library as described later.

A layer stacking approach to construct 3D integrated circuits withspherical-RCATs (S-RCATs) is illustrated in FIG. 68A-F. For an n-channelMOSFET, a p− silicon wafer 6800 may be the starting point. A buriedlayer of n+ Si 6802 may then implanted as shown in FIG. 68A, resultingin a layer of p− 6803 at the surface of the donor wafer. An alternativeis to implant a shallow layer of n+ Si and then epitaxially deposit alayer of p− Si 6803. To activate dopants in the n+ layer 6802, the wafermay be annealed, with standard annealing procedures such as thermal, orspike, or laser anneal. An oxide layer 6801 may be grown or deposited,as illustrated in FIG. 68B. Hydrogen may be implanted into the wafer6804 to enable “smart cut” process, as indicated in FIG. 68B. A layertransfer process may be conducted to attach the donor wafer in FIG. 68Bto a pre-processed circuits acceptor wafer 808 as illustrated in FIG.68C. The implanted hydrogen layer 6804 may now be utilized for cleavingaway the remainder of the wafer 6800. After the cut, chemical mechanicalpolishing (CMP) may be performed. Oxide isolation regions 6805 may beformed as illustrated in FIG. 68D. The eventual gate electrode recessedchannel may be masked and partially etched, and a spacer deposition 6806may be performed with a conformal low temperature deposition such assilicon oxide or silicon nitride or a combination. An anisotropic etchof the spacer may be performed to leave spacer material only on thevertical sidewalls of the recessed gate channel opening. An isotropicsilicon etch may then be conducted to form the spherical recess 6807 asillustrated in FIG. 68E. The spacer on the sidewall may be removed witha selective etch. A gate dielectric 6808 may then be deposited, eitherthrough atomic layer deposition or through other low-temperature oxideformation procedures described previously. A metal gate 6809 may bedeposited to fill the recessed channel, followed by a CMP and gatepatterning as illustrated in FIG. 68F. A low temperature oxide 6810 maybe deposited and planarized by the CMP. Contacts 6811 may be formed toconnect to all electrodes of the transistor as illustrated in FIG. 68F.This flow enables the formation of a low temperature S-RCATmonolithically on top of pre-processed circuitry 808. A p-channel MOSFETmay be formed with an analogous process. The p and n channel S-RCATs maybe utilized to form a monolithic 3D CMOS circuit library as describedlater.

For the purpose of programming transistors, a single type of toptransistor could be sufficient. Yet for logic type circuitry twocomplementing transistors might be helpful to allow CMOS type logic.Accordingly the above described various mono-type transistor flows couldbe performed twice. First perform all the steps to build the ‘n’ type,and than do an additional layer transfer to build the ‘p’ type on top ofit.

An additional alternative is to build both ‘n’ type and ‘p’ typetransistors on the same layer. The challenge is to form thesetransistors aligned to the underlying layers 808. The innovativesolution is described with the help of FIGS. 30 to 33. The flow could beapplied to each of the transistor constructions described before asrelating to FIGS. 21 to 29. The main difference is that now the donorwafer 2006 is pre-processed to build not just one transistor type butboth types by comprising alternating rows throughout wafer 3000 for thebuild of ‘n’ type 3004 and ‘p’ type 3006 transistors as illustrated inFIG. 30. FIG. 30 also includes a four cardinal directions 3040indicator, which will be used through FIG. 33 to assist the explanation.The width of the n-type rows 3004 is Wn and the width of the p-type rows3006 is Wp and their sum W 3008 is the width of the repeating pattern.The rows traverse from East to West and the alternating repeats all theway from North to South. Wn and Wp could be set for the minimum width ofthe corresponding transistor plus its isolation in the selected processnode. The wafer 3000 also has an alignment mark 3020 which is on thesame layers of the donor wafer as the n 3004 and p 3006 rows andaccordingly could be used later to properly align additional patterningand processing steps to said n 3004 and p 3006 rows.

The donor wafer 3000 will be placed on top of the main wafer 2002 for alayer transfer as described previously in relation to FIG. 20. The stateof the art allows for very good angular alignment of this bonding stepbut it is difficult to achieve a better than ˜1 μm position alignment.FIG. 31 illustrates the main wafer 3100 with its alignment mark 3120 andthe transferred layer 3000L of the donor wafer 3000 with its alignmentmark 3020. The misalignment in the East-West direction is DX 3124 andthe misalignment in the North-South direction is DY 3122. For simplicityof the following explanations we would assume that the alignment marks3120 and 3020 are set so that the alignment mark of the transferredlayer 3020 is always north of the alignment mark of the base wafer 3120.In addition, these alignment marks may be placed in only a few locationson each wafer, or within each step field, or within each die.

In the construction of this described monolithic 3D Integrated Circuitsthe objective is to connect structures built on layer 3000L to theunderlying main wafer 3100 and to structures on 808 layers at about thesame density and accuracy as the connections between layers in 808,which requires alignment accuracies on the order of tens of nm orbetter.

In the direction East-West the approach will be the same as wasdescribed before with respect to FIGS. 21 through 29. The pre-fabricatedstructures on the donor wafer 3000 are the same regardless of themisalignment DX 3124. Therefore just like before, the pre-fabricatedstructures may be aligned using the underlying alignment mark 3120 toform the transistors out of the ‘n’ 3004 and ‘p’ 3006 rows by etchingand additional processes as described regardless of DX. In theNorth-South direction it is now different as the pattern does change.Yet the advantage of the proposed structure of the repeating pattern inthe North-South direction of alternating rows illustrated in FIG. 30arises from the fact that for every distance W 3008, the patternrepeats. Accordingly the effective alignment uncertainty may be reducedto W 3008 as the pattern in the North-South direction keeps repeatingevery W. So it may be calculated as to how many Ws-full patterns of ‘n’3004 and ‘p’ 3006 row pairs would fit in DY 3122 and what would be theresidue Rdy 3202 (reminder of DY modulo W, 0<=Rdy<W) as illustrated inFIG. 32. Accordingly the North-South direction alignment will be to theunderlying alignment mark 3120 offset by Rdy 3202 to properly align tothe nearest n 3004 and p 3006.

Each wafer that will be processed according through this flow will havea specific Rdy 3202 which will be subject to the actual misalignment DY3122. But the masks used for patterning the various patterns need to bepre-designed and fabricated and remain the same for all wafers(processed for the same end-device) regardless of the actualmisalignment. In order to improve the connection between structures onthe transferred layer 3000L and the underlying main wafer 3100, theunderlying wafer 3100 is designed to have a landing zone of a strip33A04 going North-South of length W 3008 plus any extension required forthe via design rules, as illustrated in FIG. 33A. The strip 33A04 ispart of the base wafer 3100 and accordingly aligned to its alignmentmark 3120. Via 33A02 going down and being part of a top layer 3000Lpattern (aligned to the underlying alignment mark 3120 with Rdy offset)will be connected to the landing zone 33A04.

Alternatively a North-South strip 33B04 with at least W length, plusextensions per the via design rules, may be made on the upper layer3000L and accordingly aligned to the underlying alignment mark 3120 withRdy offset, thus connected to the via 33B02 coming ‘up’ and being partof the underlying pattern aligned to the underlying alignment mark 3120(with no offset).

An example of a process flow to create complementary transistors on asingle transferred layer for CMOS logic is as follows. First, a donorwafer is preprocessed to be prepared for the layer transfer 2006 asillustrated in FIG. 20. This complementary donor wafer is specificallyprocessed to create wafer long repeating rows 3400 of p and n wellswhereby their combined widths is W 3008 as illustrated in FIG. 34A. FIG.34A is rotated 90 degrees with respect to FIG. 30 as indicated by thefour cardinal directions indicator, to support the followingdescription. FIG. 34B is a cross-sectional drawing illustration of apre-processed wafer used for a layer transfer. Second, a P− wafer 3402is processed to have a “buried” layer of N+ 3404 and of P+ 3406 bymasking, ion implantation, and activation in repeated widths of W 3008.This is followed by a P− epi growth (epitaxial growth) 3408 and a mask,ion implantation, and anneal of N− 3410 in FIG. 34C. Third, a shallow P+3412 and N+ 3414 are formed by mask, shallow ion implantation, and RTAactivation as shown in FIG. 34D. FIG. 34E is a drawing illustration ofthe pre-processed wafer for a layer transfer by an implant of an atomicspecies, such as H+, preparing the SmartCut “cleaving plane” 3416 in thelower part of the deep N+ & P+ regions. Fourthly, a thin layer of oxide3418 is deposited or grown to facilitate the oxide-oxide bonding to thelayer 808. This oxide 3418 may be deposited or grown before the H+implant, and may comprise differing thicknesses over the P+ 3412 and N+3414 regions so as to allow an even H+ implant range stopping tofacilitate a level and continuous Smart Cut cleave plane 3416. Adjustingthe depth of the H+ implant if needed could be achieved in other waysincluding different implant depth setting for the P+ 3412 and N+ 3414regions. Now a layer-transfer-flow is performed, as illustrated in FIG.20, to transfer the pre-processed striped multi-well single crystalsilicon wafer on top of 808 as shown in FIG. 35A. The cleaved surface3502 may or may not be smoothed by a combination of CMP and chemicalpolish techniques.

A variation of the p & n well stripe donor wafer preprocessing above isto also preprocess the well isolations with shallow trench etching,dielectric fill, and CMP prior to the layer transfer.

The step by step low temperature formation side views of the planar CMOStransistors on the complementary donor wafer (FIG. 34) is illustrated inFIGS. 35A to 35G. FIG. 35A illustrates the layer transferred on top ofthe second antifuse layer with its configurable interconnects 808 afterthe smart cut 3502 wherein the N+ 3404 & P+ 3406 are on top running inthe East to West direction and repeating widths in the North to Southdirection as indicated by cardinal 3500. Then the substrate P+ 35B06 andN+ 35B08 source and 808 metal layer 35B04 access openings, as well asthe transistor isolation 35B02 are masked and etched in FIG. 35B. Thisand all subsequent masking layers are aligned as described and shownabove in FIG. 30-32 and is illustrated in FIG. 35B where the layeralignment mark 3020 is aligned with offset Rdy to the base wafer layer808 alignment mark 3120. Utilizing an additional masking layer, theisolation region 35C02 is defined by etching all the way to the top of808 to provide full isolation between transistors or groups oftransistors in FIG. 35C. Then a Low-Temperature Oxide 35C04 is depositedand chemically mechanically polished. Then a thin polish stop layer35C06 such as low temperature silicon nitride is deposited resulting inthe structure illustrated in FIG. 35C. The n-channel source 35D02, drain35D04 and self-aligned gate 35D06 are defined by masking and etching thethin polish stop layer 35C06 and then a sloped N+ etch as illustrated inFIG. 35D. The above is repeated on the P+ to form the p-channel source35D08, drain 35D10 and self-aligned gate 35D12 to create thecomplementary devices and form Complimentary Metal Oxide Semiconductor(CMOS). Both sloped (35-90 degrees, 45 is shown) etches may beaccomplished with wet chemistry or plasma etching techniques. This etchforms N+ angular source and drain extensions 35D12 and P+ angular sourceand drain extension 35D14. FIG. 35E illustrates the structure followingdeposition and densification of a low temperature based Gate Dielectric35E02, or alternately a low temperature microwave plasma oxidation ofthe silicon surfaces, to serve as the n & p MOSFET gate oxide, and thendeposition of a gate material 35E04, such as aluminum or tungsten.Alternatively, a high-k metal gate structure may be formed as follows.Following an industry standard HF/SC1/SC2 clean to create an atomicallysmooth surface, a high-k dielectric 35E02 is deposited. Thesemiconductor industry has chosen Hafnium-based dielectrics as theleading material of choice to replace SiO₂ and Silicon oxynitride. TheHafnium-based family of dielectrics includes hafnium oxide and hafniumsilicate/hafnium silicon oxynitride. Hafnium oxide, HfO₂, has adielectric constant twice as much as that of hafnium silicate/hafniumsilicon oxynitride (HfSiO/HfSiON k˜15). The choice of the metal iscritical for the device to perform properly. A metal replacing N⁺ polyas the gate electrode needs to have a work function of ˜4.2 eV for thedevice to operate properly and at the right threshold voltage.Alternatively, a metal replacing P⁺ poly as the gate electrode needs tohave a work function of ˜5.2 eV to operate properly. The TiAl and TiAlNbased family of metals, for example, could be used to tune the workfunction of the metal from 4.2 eV to 5.2 eV. The gate oxides and gatemetals may be different between the n and p channel devices, and isaccomplished with selective removal of one type and replacement of theother type.

FIG. 35F illustrates the structure following a chemical mechanicalpolishing of the metal gate 35E04 utilizing the nitride polish stoplayer 35C06. Finally a thick oxide 35G02 is deposited and contactopenings are masked and etched preparing the transistors to be connectedas illustrated in FIG. 35G. This figure also illustrates the layertransfer silicon via 35G04 masked and etched to provide interconnectionof the top transistor wiring to the lower layer 808 interconnect wiring35B04. This flow enables the formation of fully crystallized top CMOStransistors that could be connected to the underlying multi-metal layersemiconductor device without exposing the underlying devices andinterconnects metals to high temperature. These transistors could beused as programming transistors of the antifuse on layer 808 or forother functions such as logic or memory in a 3D integrated circuit. Anadditional advantage of this flow is that the SmartCut H+, or otheratomic species, implant step is done prior to the formation of the MOStransistor gates avoiding potential damage to the gate function.

The above flows, whether single type transistor donor wafer orcomplementary type transistor donor wafer, could be repeated multipletimes to build a multi level 3D monolithic integrated system. It shouldbe noted that the prior art shows alternatives for 3D devices. The mostcommon technologies are, either the use of thin film transistors (TFT)constructing a monolithic 3D device, or the stacking of prefabricatedwafers and using a through silicon via (TSV) to connect them. The firstapproach is limited with the performance of thin film transistors whilethe stacking approach is limited due to the relatively largemisalignment between the stack layers and the relatively low density ofthe through silicon vias connecting them. As to misalignmentperformance, the best technology available could attain only to the 0.25micro-meter range, which will limit the through silicon via pitch toabout 2 micro-meters.

The alternative process flows presented in FIGS. 20 to 35, 40, 54 to 61,and 65 to 68 provides true monolithic 3D integrated circuits. It allowsthe use of layers of single crystal silicon transistors with the abilityto have the upper transistors aligned to the underlying circuits as wellas those layers aligned each to other; hence, only limited by theStepper capabilities. Similarly the contact pitch between the uppertransistors and the underlying circuits is compatible with the contactpitch of the underlying layers. While in the best current stackingapproach the stack wafers are a few microns thick, the alternativeprocess flow presented in FIGS. 20 to 35, 40, 54 to 61, and 65 to 68suggests very thin layers of typically 100 nm but in recent workdemonstrated layers that are 20 nm thin.

Accordingly the presented alternatives allow for true monolithic 3Ddevices. This monolithic 3D technology provides the ability to integratewith full density, and to be scaled to tighter features, at the samepace as the semiconductor industry.

Additionally, true monolithic 3D devices allow the formation of varioussub-circuit structures in a spatially efficient configuration withhigher performance than 2D. Illustrated below are some examples of how a3D ‘library’ of cells may be constructed in the true monolithic 3Dfashion.

FIG. 42 illustrates a typical 2D CMOS inverter layout and schematicdiagram where the NMOS transistor 4202 and the PMOS transistor 4204 arelaid out side by side and are in differently doped wells. The NMOSsource 4206 is typically grounded, the NMOS and PMOS drains 4208 areelectrically tied together, the NMOS & PMOS gates 4210 are electricallytied together, and the PMOS 4207 source is tied to +Vdd. The structurebuilt in 3D described below will take advantage of these connections inthe 3^(rd) dimension.

An acceptor wafer is preprocessed as illustrated in FIG. 43A. A heavilydoped N single crystal silicon wafer 4300 may be implanted with a heavydose of N+ species, and annealed to create an even lower resistivitylayer 4302. Alternatively, a high temperature resistant metal such asTungsten may be added as a low resistance interconnect layer, as a sheetlayer or as a defined geometry metallization. An oxide 4304 is grown ordeposited to prepare the wafer for bonding. A donor wafer ispreprocessed to prepare for layer transfer 2006 of FIG. 20 asillustrated in FIG. 43B. FIG. 43B is a drawing illustration of thepre-processed donor wafer used for a layer transfer. A P− wafer 4310 isprocessed to make it ready for a layer transfer by a deposition orgrowth of an oxide 4312, surface plasma treatments, and by an implant ofan implant species such as H+ preparing the SmartCut cleaving plane4314. Now a layer-transfer-flow may be performed, as illustrated in FIG.20, to transfer the pre-processed single crystal silicon donor wafer ontop of the acceptor wafer as illustrated in FIG. 43C. The cleavedsurface 4316 may or may not be smoothed by a combination of CMP,chemical polish, and epitaxial (EPI) smoothing techniques.

A process flow to create devices and interconnect to build the 3Dlibrary is illustrated in FIGS. 44A to F. As illustrated in FIG. 44A, apolish stop layer 4404, such as silicon nitride or amorphous carbon, maybe deposited after a protecting oxide layer 4402. The NMOS source toground connection 4406 is masked and etched to contact the heavily dopedground plane layer 4302. This may be done at typical contact layer sizeand precision. For the sake of clarity, the two oxide layers, 4304 fromthe acceptor and 4312 from the donor wafer, are combined and designatedas 4400. The NMOS source to ground connection 4406 is filled with adeposition of heavily doped polysilicon or amorphous silicon, or a highmelting point metal such as tungsten, and then chemically mechanicallypolished as illustrated in FIG. 44B to the level of the protecting oxidelayer 4404. Now a standard NMOS transistor formation process flow isperformed, with two exceptions. First, no photolithographic maskingsteps are used for an implant step that differentiates NMOS and PMOSdevices, as only the NMOS devices are being formed now. Second, hightemperature anneal steps may or may not be done during the NMOSformation, as some or all of the necessary anneals can be done after thePMOS formation described later. A typical shallow trench (STI) isolationregion 4410 is formed between the eventual NMOS transistors bylithographic definition, plasma etching to the oxide layer 4400,depositing a gap-fill oxide, and chemical mechanically polishing flat asillustrated in FIG. 44C. Threshold adjust implants may or may not beperformed at this time. The silicon surface is cleaned of remainingoxide with an HF (Hydrofluoric Acid) etch. A gate oxide 4411 isthermally grown and doped polysilicon is deposited to form the gatestack. The gate stack is lithographically defined and etched, creatingNMOS gates 4412 and the poly on STI interconnect 4414 as illustrated inFIG. 44D. Alternatively, a high-k metal gate process sequence may beutilized at this stage to form the gate stacks 4412 and interconnectover STI 4414. Gate stack self aligned LDD (Lightly Doped Drain) andhalo punch-thru implants may be performed at this time to adjustjunction and transistor breakdown characteristics. FIG. 44E illustratesa typical spacer deposition of oxide and nitride and a subsequentetchback, to form implant offset spacers 4416 on the gate stacks andthen a self aligned N+ source and drain implant is performed to createthe NMOS transistor source and drain 4418. High temperature anneal stepsmay or may not be done at this time to activate the implants and setinitial junction depths. A self aligned silicide may then be formed.Additionally, one or more metal interconnect layers with associatedcontacts and vias may be constructed utilizing standard semiconductormanufacturing processes. The metal layer may be constructed at lowertemperature using such metals as Copper or Aluminum, or may beconstructed with refractory metals such as Tungsten to provide hightemperature utility at greater than 400 degrees Centigrade. A thickoxide 4420 may be deposited as illustrated in FIG. 44F and CMP'd(chemical mechanically polished) flat. The wafer surface 4422 may betreated with a plasma activation in preparation to be an acceptor waferfor the next layer transfer.

A donor wafer to create PMOS devices is preprocessed to prepare forlayer transfer 2006 of FIG. 20 as illustrated in FIG. 45A. An N− wafer4502 is processed to make it ready for a layer transfer by a depositionor growth of an oxide 4504, surface plasma treatments, and by an implantof an atomic species, such as H+, preparing the SmartCut cleaving plane4506. Now a layer-transfer-flow may be performed, as illustrated in FIG.20, to transfer the pre-processed single crystal silicon donor wafer ontop of the acceptor wafer as illustrated in FIG. 45B, bonding theacceptor wafer oxide 4420 to the donor wafer oxide 4504. The cleavedsurface 4508 may or may not be smoothed by a combination of CMP,chemical polish, and epitaxial (EPI) smoothing techniques.

To optimize the PMOS mobility, the donor wafer is rotated 90 degreeswith respect to the acceptor wafer prior to bonding to now facilitatecreation of the PMOS channel in the <110> silicon plane direction. Forthe sake of clarity, the two oxide layers, 4420 from the acceptor and4504 from the donor wafer, are combined and designated as 4500. Now astandard PMOS transistor formation process flow is performed, with oneexception. No photolithographic masking steps are used for the implantsteps that differentiate NMOS and PMOS devices, as only the PMOS devicesare being formed now. An advantage of this 3D cell structure is theindependent formation of the PMOS transistors and the NMOS transistors.Therefore, each transistor formation may be optimized independently.This may be accomplished by the independent selection of the crystalorientation, various stress materials and techniques, such as, forexample, doping profiles, material thicknesses and compositions,temperature cycles, and so forth.

A polishing stop layer, such as silicon nitride or amorphous carbon, maybe deposited after a protecting oxide layer 4510. A typical shallowtrench (STI) isolation region 4512 is formed between the eventual PMOStransistors by lithographic definition, plasma etching to the oxidelayer 4500, depositing a gap-fill oxide, and chemical mechanicallypolishing flat as illustrated in FIG. 45C. Threshold adjust implants mayor may not be performed at this time. The silicon surface is cleaned ofremaining oxide with an HF (Hydrofluoric Acid) etch. A gate oxide 4514is thermally grown and doped polysilicon is deposited to form the gatestack. The gate stack is lithographically defined and etched, creatingPMOS gates 4516 and the poly on STI interconnect 4518 as illustrated inFIG. 45D. Alternatively, a high-k metal gate process sequence may beutilized at this stage to form the gate stacks 4516 and interconnectover STI 4518. Gate stack self aligned LDD (Lightly Doped Drain) andhalo punch-thru implants may be performed at this time to adjustjunction and transistor breakdown characteristics. FIG. 45E illustratesa typical spacer deposition of oxide and nitride and a subsequentetchback, to form implant offset spacers 4520 on the gate stacks andthen a self aligned P+ source and drain implant is performed to createthe PMOS transistor source and drain 4522. Thermal anneals to activateimplants and set junctions in both the PMOS and NMOS devices may beperformed with RTA (Rapid Thermal Anneal) or furnace thermal exposures.Alternatively, laser annealing may be utilized after the NMOS and PMOSsources and drain implants to activate implants and set the junctions.Optically absorptive and reflective layers as described previously maybe employed to anneal implants and activate junctions. A thick oxide4524 is deposited as illustrated in FIG. 45F and CMP'ed (chemicalmechanically polished) flat.

FIG. 45G illustrates the formation of the three groups of eightinterlayer contacts. An etch stop and polishing stop layer or layers4530 may be deposited, such as silicon nitride or amorphous carbon.First, the deepest contact 4532 to the N+ ground plane layer 4302, aswell as the NMOS drain only contact 4540 and the NMOS only gate on STIcontact 4546 are masked and etched. Then the NMOS & PMOS gate on STIinterconnect contact 4542 and the NMOS and PMOS drain contact 4544 aremasked and etched. Then the PMOS level contacts are masked and etched:the PMOS gate interconnect on STI contact 4550, the PMOS only sourcecontact 4552, and the PMOS only drain contact 4554. Alternatively, theshallowest contacts may be masked and etched first, followed by themid-level, and then the deepest contacts. The metal lines are maskdefined and etched, filled with barrier metals and copper interconnect,and CMP'ed in a normal Dual Damascene interconnect scheme, therebycompleting the eight types of contact connections.

With reference to the 2D CMOS inverter cell schematic and layoutillustrated in FIG. 42, the above process flow may be used to constructa compact 3D CMOS inverter cell example as illustrated in FIGS. 46A thru46C. The topside view of the 3D cell is illustrated in FIG. 46A wherethe STI (shallow trench isolation) 4600 for both NMOS and PMOS is drawncoincident and the PMOS is on top of the NMOS. The cell X crosssectional view is illustrated in FIG. 46B and the Y cross sectional viewis illustrated in FIG. 46C. The NMOS and PMOS gates 4602 are drawncoincident and stacked, and are connected by an NMOS gate on STI to PMOSgate on STI contact 4604, which is similar to contact 4542 in FIG. 45G.This is the connection for inverter input signal A as illustrated inFIG. 42. The N+ source contact to the ground plane 4606 in FIGS. 46A & Cmakes the NMOS source to ground connection 4206 illustrated in FIG. 42.The PMOS source contacts 4608, which are similar to contact 4552 in FIG.45G, make the PMOS source connection to +V 4207 as shown in FIG. 42. TheNMOS and PMOS drain shared contacts 4610, which are similar to contact4544 in FIG. 45G, make the shared connection 4208 as the output Y inFIG. 42. The ground to ground plane contact, similar to contact 4532 inFIG. 45G, is not shown. This contact may not be needed in every cell andmay be shared.

Other 3D logic or memory cells may be constructed in a similar fashion.An example of a typical 2D 2-input NOR cell schematic and layout isillustrated in FIG. 47. The NMOS transistors 4702 and the PMOStransistors 4704 are laid out side by side and are in differently dopedwells. The NMOS sources 4706 are typically grounded, both of the NMOSdrains and one of the PMOS drains 4708 are electrically tied together togenerate the output Y, and the NMOS & PMOS gates 4710 are electricallypaired together for input A or input B. The structure built in 3Ddescribed below will take advantage of these connections in the 3^(rd)dimension.

The above process flow may be used to construct a compact 3D 2-input NORcell example as illustrated in FIGS. 48A thru 48C. The topside view ofthe 3D cell is illustrated in FIG. 48A where the STI (shallow trenchisolation) 4800 for both NMOS and PMOS is drawn coincident on the bottomand sides, and not on the top silicon layer to allow NMOS drain onlyconnections to be made. The cell X cross sectional view is illustratedin FIG. 48B and the Y cross sectional view is illustrated in FIG. 48C.The NMOS and PMOS gates 4802 are drawn coincident and stacked, and eachare connected by a NMOS gate on STI to PMOS gate on STI contact 4804,which is similar to contact 4542 in FIG. 45G. These are the connectionsfor input signals A & B as illustrated in FIG. 47. The N+ source contactto the ground plane 4806 in FIGS. 48A & C makes the NMOS source toground connection 4706 illustrated in FIG. 47. The PMOS source contacts4808, which are similar to contact 4552 in FIG. 45G, make the PMOSsource connection to +V 4707 as shown in FIG. 47. The NMOS and PMOSdrain shared contacts 4810, which are similar to contact 4544 in FIG.45G, make the shared connection 4708 as the output Y in FIG. 47. TheNMOS source contacts 4812, which are similar to contact 4540 in FIG. 45,make the NMOS connection to Output Y, which is connected to the NMOS andPMOS drain shared contacts 4810 with metal to form output Y in FIG. 47.The ground to ground plane contact, similar to contact 4532 in FIG. 45G,is not shown. This contact may not be needed in every cell and may beshared.

The above process flow may be used to construct an alternative compact3D 2-input NOR cell example as illustrated in FIGS. 49A thru 49C. Thetopside view of the 3D cell is illustrated in FIG. 49A where the STI(shallow trench isolation) 4900 for both NMOS and PMOS may be drawncoincident on the top and sides, and not on the bottom silicon layer toallow isolation between the NMOS-A and NMOS-B transistors and allowindependent gate connections. The NMOS or PMOS transistors referred towith the letter-A or -B identify which NMOS or PMOS transistor gate isconnected to, either the A input or the B input, as illustrated in FIG.47. The cell X cross sectional view is illustrated in FIG. 49B and the Ycross sectional view is illustrated in FIG. 49C. The PMOS-B gate 4902may be drawn coincident and stacked with dummy gate 4904, and the PMOS-Bgate 4902 is connected to input B by PMOS gate only on STI contact 4908.Both the NMOS-A gate 4910 and NMOS-B gate 4912 are drawn underneath thePMOS-A gate 4906. The NMOS-A gate 4910 and the PMOS-A gate 4912 areconnected together and to input A by NMOS gate on STI to PMOS gate onSTI contact 4914, which is similar to contact 4542 in FIG. 45G. TheNMOS-B gate 4912 is connected to input B by a NMOS only gate on STIcontact 4916, which is similar to contact 4546 illustrated in FIG. 45G.These are the connections for input signals A & B 4710 as illustrated inFIG. 47. The N+ source contact to the ground plane 4918 in FIGS. 49A & Cmakes the NMOS source to ground connection 4706 illustrated in FIG. 47.The PMOS-B source contacts 4920 to Vdd, which are similar to contact4552 in FIG. 45G, make the PMOS source connection to +V 4707 as shown inFIG. 47. The NMOS-A&B and PMOS-B drain shared contacts 4922, which aresimilar to contact 4544 in FIG. 45G, make the shared connection 4708 asthe output Y in FIG. 47. The ground to ground plane contact, similar tocontact 4532 in FIG. 45G, is not shown. This contact may not be neededin every cell and may be shared.

The above process flow may also be used to construct a CMOS transmissiongate. An example of a typical 2D CMOS transmission gate schematic andlayout is illustrated in FIG. 50A. The NMOS transistor 5002 and the PMOStransistor 5004 are laid out side by side and are in differently dopedwells. The control signal A as the NMOS gate input 5006 and itscompliment A as the PMOS gate input 5008 allow a signal from the inputto fully pass to the output when both NMOS and PMOS transistors areturned on (A=1, Ā=0), and not to pass any input signal when both areturned off (A=0, Ā=1). The NMOS and PMOS sources 5010 are electricallytied together and to the input, and the NMOS and PMOS drains 5012 areelectrically tied together to generate the output. The structure builtin 3D described below will take advantage of these connections in the3^(rd) dimension.

The above process flow may be used to construct a compact 3D CMOStransmission cell example as illustrated in FIGS. 50B thru 50D. Thetopside view of the 3D cell is illustrated in FIG. 50B where the STI(shallow trench isolation) 5000 for both NMOS and PMOS may be drawncoincident on the top and sides. The cell X cross sectional view isillustrated in FIG. 50C and the Y cross sectional view is illustrated inFIG. 50D. The PMOS gate 5014 may be drawn coincident and stacked withthe NMOS gate 5016. The PMOS gate 5014 is connected to control signal A5008 by PMOS gate only on STI contact 5018. The NMOS gate 5016 isconnected to control signal A 5006 by NMOS gate only on STI contact5020. The NMOS and PMOS source shared contacts 5022 make the sharedconnection 5010 for the input in FIG. 50A. The NMOS and PMOS drainshared contacts 5024 make the shared connection 5012 for the output inFIG. 50A.

Additional logic and memory cells, such as a 2-input NAND gate, atransmission gate, an MOS driver, a flip-flop, a 6T SRAM, a floatingbody DRAM, a CAM (Content Addressable Memory) array, etc. may besimilarly constructed with this 3D process flow and methodology.

Another more compact 3D library may be constructed whereby one or morelayers of metal interconnect may be allowed between the NMOS and PMOSdevices. This methodology may allow more compact cell constructionespecially when the cells are complex; however, the top PMOS devicesshould now be made with a low-temperature layer transfer and transistorformation process as shown previously, unless the metals between theNMOS and PMOS layers are constructed with refractory metals, such as,for example, Tungsten.

Accordingly, the library process flow proceeds as described above forFIGS. 43 and 44. Then the layer or layers of conventional metalinterconnect may be constructed on top of the NMOS devices, and thenthat wafer is treated as the acceptor wafer or ‘House’ wafer 808 and thePMOS devices may be layer transferred and constructed in one of the lowtemperature flows as shown in FIGS. 21, 22, 29, 39, and 40.

The above process flow may be used to construct, for example, a compact3D CMOS 6-Transistor SRAM (Static Random Access Memory) cell asillustrated, for example, in FIGS. 51A thru 51D. The SRAM cell schematicis illustrated in FIG. 51A. Access to the cell is controlled by the wordline transistors M5 and M6 where M6 is labeled as 5106. These accesstransistors control the connection to the bit line 5122 and the bit linebar line 5124. The two cross coupled inverters M1-M4 are pulled high toVdd 5108 with M1 or M2 5102, and are pulled to ground 5110 thrutransistors M3 or M4 5104.

The topside NMOS, with no metal shown, view of the 3D SRAM cell isillustrated in FIG. 51B, the SRAM cell X cross sectional view isillustrated in FIG. 51C, and the Y cross sectional view is illustratedin FIG. 51D. NMOS word line access transistor M6 5106 is connected tothe bit line bar 5124 with a contact to NMOS metal 1. The NMOS pull downtransistor 5104 is connected to the ground line 5110 by a contact toNMOS metal 1 and to the back plane N+ ground layer. The bit line 5122 isin NMOS metal 1 and transistor isolation oxide 5100 are illustrated. TheVdd supply 5108 is brought into the cell on PMOS metal 1 and connectedto M2 5102 thru a contact to P+. The PMOS poly on STI to NMOS poly onSTI contact 5112 connects the gates of both M2 5102 and M4 5104 toillustrate the 3D cross coupling. The common drain connection of M2 andM4 to the bit bar access transistor M6 is made thru the PMOS P+ to NMOSN+ contact 5114.

The above process flow may also be used to construct a compact 3D CMOS 2Input NAND cell example as illustrated in FIGS. 62A thru 62D. The NAND-2cell schematic and 2D layout is illustrated in FIG. 62A. The two PMOStransistor 6201 sources 6211 are tied together and to V+ supply and thePMOS drains are tied together and to one NMOS source 6213 and to theoutput Y. Input A is tied 6203 to one PMOS gate and one NMOS gate. InputB is tied 6204 to the other PMOS and NMOS gates. The NMOS A drain istied 6220 to the NMOS B source, and the PMOS B drain 6212 is tied toground. The structure built in 3D described below will take advantage ofthese connections in the 3^(rd) dimension.

The topside view of the 3D NAND-2 cell, with no metal shown, isillustrated in FIG. 62B, the NAND-2 cell X cross sectional views isillustrated in FIG. 62C, and the Y cross sectional view is illustratedin FIG. 62D. The two PMOS sources 6211 are tied together in the PMOSsilicon layer and to the V+ supply metal 6216 in the PMOS metal 1 layerthru a contact. The NMOS A drain and the PMOS A drain are tied 6213together with a thru P+ to N+ contact and to the Output Y metal 6217 inPMOS metal 2, and also connected to the PMOS B drain contact thru PMOSmetal 1 6215. Input A on PMOS metal 2 6214 is tied 6203 to both the PMOSA gate and the NMOS A gate with a PMOS gate on STI to NMOS gate on STIcontact. Input B is tied 6204 to the PMOS B gate and the NMOS B using aP+ gate on STI to NMOS gate on STI contact. The NMOS A source and theNMOS B drain are tied together 6220 in the NMOS silicon layer. The NMOSB source 6212 is tied connected to the ground line 6218 by a contact toNMOS metal 1 and to the back plane N+ ground layer. The transistorisolation oxides 6200 are illustrated.

Another compact 3D library may be constructed whereby one or more layersof metal interconnect is allowed between more than two NMOS and PMOSdevice layers. This methodology allows a more compact cell constructionespecially when the cells are complex; however, devices above the firstNMOS layer should now be made with a low temperature layer transfer andtransistor formation process as shown previously.

Accordingly, the library process flow proceeds as described above forFIGS. 43 and 44. Then the layer or layers of conventional metalinterconnect may be constructed on top of the NMOS devices, and thenthat wafer is treated as the acceptor wafer or house 808 and the PMOSdevices may be layer transferred and constructed in one of the lowtemperature flows as shown in FIGS. 21, 22, 29, 39, and 40. And thenthis low temperature process may be repeated again to form another layerof PMOS or NMOS device, and so on.

The above process flow may also be used to construct a compact 3D CMOSContent Addressable Memory (CAM) array as illustrated in FIGS. 53A to53E. The CAM cell schematic is illustrated in FIG. 53A. Access to theSRAM cell is controlled by the word line transistors M5 and M6 where M6is labeled as 5332. These access transistors control the connection tothe bit line 5342 and the bit line bar line 5340. The two cross coupledinverters M1-M4 are pulled high to Vdd 5334 with M1 or M2 5304, and arepulled to ground 5330 thru transistors M3 or M4 5306. The match line5336 delivers comparison circuit match or mismatch state to the matchaddress encoder. The detect line 5316 and detect line bar 5318 selectthe comparison circuit cell for the address search and connect to thegates of the pull down transistors M8 and M10 5326 to ground 5322. TheSRAM state read transistors M7 and M9 5302 gates are connected to theSRAM cell nodes n1 and n2 to read the SRAM cell state into thecomparison cell. The structure built in 3D described below may takeadvantage of these connections in the 3^(rd) dimension.

The topside top NMOS view of the 3D CAM cell, without metals shown, isillustrated in FIG. 53B, the topside top NMOS view of the 3D CAM cell,with metal shown, is illustrated in FIG. 53C, the 3DCAM cell X crosssectional view is illustrated in FIG. 53D, and the Y cross sectionalview is illustrated in FIG. 53E. The bottom NMOS word line accesstransistor M6 5332 is connected to the bit line bar 5342 with an N+contact to NMOS metal 1. The bottom NMOS pull down transistor 5306 isconnected to the ground line 5330 by an N+ contact to NMOS metal 1 andto the back plane N+ ground layer. The bit line 5340 is in NMOS metal 1and transistor isolation oxides 5300 are illustrated. The ground 5322 isbrought into the cell on top NMOS metal-2. The Vdd supply 5334 isbrought into the cell on PMOS metal-1 5334 and connects to M2 5304 thrua contact to P+. The PMOS poly on STI to bottom NMOS poly on STI contact5314 connects the gates of both M2 5304 and M4 5306 to illustrate theSRAM 3D cross coupling and connects to the comparison cell node n1 thruPMOS metal-1 5312. The common drain connection of M2 and M4 to the bitbar access transistor M6 is made thru the PMOS P+ to NMOS N+ contact5320 and connects node n2 to the M9 gate 5302 via PMOS metal-1 5310 andmetal to gate on STI contact 5308. Top NMOS comparison cell groundpulldown transistor M10 gate 5326 is connected to detect line 5316 witha NMOS metal-2 to gate poly on STI contact. The detect line bar 5318 intop NMOS metal-2 connects thru contact 5324 to the gate of M8 in the topNMOS layer. The match line 5336 in top NMOS metal-2 connects to thedrain side of M9 and M7.

Another compact 3D library may be constructed whereby one or more layersof metal interconnect is allowed between the NMOS and PMOS devices andone or more of the devices is constructed vertically.

A compact 3D CMOS 8 Input NAND cell may be constructed as illustrated inFIGS. 63A thru 63G. The NAND-8 cell schematic and 2D layout isillustrated in FIG. 63A. The eight PMOS transistor 6301 sources 6311 aretied together and to V+ supply and the PMOS drains are tied together6313 and to the NMOS A drain and to the output Y. Inputs A to H are tiedto one PMOS gate and one NMOS gate. Input A is tied 6303 to the PMOS Agate and NMOS A gate. The NMOS A source is tied 6320 to the NMOS Bdrain, and the NMOS H source 6312 is tied to ground. The structure builtin 3D described below will take advantage of these connections in the3^(rd) dimension.

The topside view of the 3D NAND-8 cell, with no metal shown and withhorizontal NMOS and PMOS devices, is illustrated in FIG. 63B, the cell Xcross sectional views is illustrated in FIG. 63C, and the Y crosssectional view is illustrated in FIG. 63D. The NAND-8 cell with verticalPMOS and horizontal NMOS devices are shown in FIGS. 63E for topsideview, 63F for the X cross section view, and 63H for the Y crosssectional view. The eight PMOS sources 6311 are tied together in thePMOS silicon layer and to the V+ supply metal 6316 in the PMOS metal 1layer thru P+ to Metal contacts. The NMOS A drain and the PMOS A drainare tied 6313 together with a thru P+ to N+ contact 6317 and to theoutput Y supply metal 6315 in PMOS metal 2, and also connected to all ofthe PMOS drain contacts thru PMOS metal 1 6315. Input A on PMOS metal 26314 is tied 6303 to both the PMOS A gate and the NMOS A gate with aPMOS gate on STI to NMOS gate on STI contact. All the other inputs aretied to P and N gates in similar fashion. The NMOS A source and the NMOSB drain are tied together 6320 in the NMOS silicon layer. The NMOS Hsource 6232 is tied connected to the ground line 6318 by a contact toNMOS metal 1 and to the back plane N+ ground layer. The transistorisolation oxides 6300 are illustrated.

A compact 3D CMOS 8 Input NOR may be constructed as illustrated in FIGS.64A thru 64G. The NOR-8 cell schematic and 2D layout is illustrated inFIG. 64A. The PMOS H transistor source 6411 may be tied to V+ supply.The NMOS drains are tied together 6413 and to the drain of PMOS A and toOutput Y. Inputs A to H are tied to one PMOS gate and one NMOS gate.Input A is tied 6403 to the PMOS A gate and NMOS A gate. The NMOSsources are all tied 6412 to ground. The PMOS H drain is tied 6420 tothe next PMOS source in the stack, PMOS G, and repeated so forth. Thestructure built in 3D described below will take advantage of theseconnections in the 3^(rd) dimension.

The topside view of the 3D NOR-8 cell, with no metal shown and withhorizontal NMOS and PMOS devices, is illustrated in FIG. 64B, the cell Xcross sectional views is illustrated in FIG. 64C, and the Y crosssectional view is illustrated in FIG. 64D. The NAND-8 cell with verticalPMOS and horizontal NMOS devices are shown in FIGS. 64E for topsideview, 64F for the X cross section view, and 64G for the Y crosssectional view. The PMOS H source 6411 is tied to the V+ supply metal6416 in the PMOS metal 1 layer thru a P+ to Metal contact. The PMOS Hdrain is tied 6420 to PMOS G source in the PMOS silicon layer. The NMOSsources 6412 are all tied to ground by N+ to NMOS metal-1 contacts tometal lines 6418 and to the backplane N+ ground layer in the N−substrate. Input A on PMOS metal-2 is tied to both PMOS and NMOS gates6403 with a gate on STI to gate on STI contact 6414. The NMOS drains areall tied together with NMOS metal-2 6415 to the NMOS A drain and PMOS Adrain 6413 by the P+ to N+ to PMOS metal-2 contact 6417, which is tiedto output Y. FIG. 64G illustrates the use of vertical PMOS transistorsto compactly tie the stack sources and drain, and make a very compactarea cell shown in FIG. 64E. The transistor isolation oxides 6400 areillustrated.

Accordingly a CMOS circuit may be constructed where the various circuitcells are built on two silicon layers achieving a smaller circuit areaand shorter intra and inter transistor interconnects. As interconnectsbecome dominating for power and speed, packing circuits in a smallerarea would result in a lower power and faster speed end device.

Additionally, when circuit cells are built on two or more layers of thinsilicon as shown above, and enjoy the dense vertical thru silicon viainterconnections, the metallization layer scheme to take advantage ofthis dense 3D technology may be improved as follows. FIG. 59 illustratesthe prior art of silicon integrated circuit metallization schemes. Theconventional transistor silicon layer 5902 is connected to the firstmetal layer 5910 thru the contact 5904. The dimensions of thisinterconnect pair of contact and metal lines generally are at theminimum line resolution of the lithography and etch capability for thattechnology process node. Traditionally, this is called a “1X” designrule metal layer. Usually, the next metal layer is also at the “1X”design rule, the metal line 5912 and via below 5905 and via above 5906that connects metals 5912 with 5910 or with 5914 where desired. Then thenext few layers are often constructed at twice the minimum lithographicand etch capability and called ‘2X’ metal layers, and have thicker metalfor current carrying capability. These are illustrated with metal line5914 paired with via 5907 and metal line 5916 paired with via 5908 inFIG. 59. Accordingly, the metal via pairs of 5918 with 5909, and 5920with bond pad opening 5922, represent the ‘4X’ metallization layerswhere the planar and thickness dimensions are again larger and thickerthan the 2X and 1X layers. The precise number of 1X or 2X or 4X layersmay vary depending on interconnection needs and other requirements;however, the general flow is that of increasingly larger metal line,metal space, and via dimensions as the metal layers are farther from thesilicon transistors and closer to the bond pads.

The metallization layer scheme may be improved for 3D circuits asillustrated in FIG. 60. The first crystallized silicon device layer 6024is illustrated as the NMOS silicon transistor layer from the above 3Dlibrary cells, but may also be a conventional logic transistor siliconsubstrate or layer. The ‘1X’ metal layers 6020 and 6019 are connectedwith contact 6010 to the silicon transistors and vias 6008 and 6009 toeach other or metal line 6018. The 2X layer pairs metal 6018 with via6007 and metal 6017 with via 6006. The 4X metal layer 6016 is pairedwith via 6005 and metal 6015, also at 4X. However, now via 6004 isconstructed in 2X design rules to enable metal line 6014 to be at 2X.Metal line 6013 and via 6003 are also at 2X design rules andthicknesses. Vias 6002 and 6001 are paired with metal lines 6012 and6011 at the 1X minimum design rule dimensions and thickness. The thrusilicon via 6000 of the illustrated PMOS layer transferred silicon 6022may then be constructed at the 1X minimum design rules and provide formaximum density of the top layer. The precise numbers of 1X or 2X or 4Xlayers may vary depending on circuit area and current carryingmetallization requirements and tradeoffs. The layer transferred toptransistor layer 6022 may be any of the low temperature devicesillustrated herein.

As well, the independent formation of each transistor layer enables theuse of materials other than silicon to construct transistors. Forexample, a thin III-V compound quantum well channel such as InGaAs andInSb may be utilized on one or more of the 3D layers described above bydirect layer transfer or deposition and the use of buffer compounds suchas GaAs and InAlAs to buffer the silicon and III-V lattice mismatches.This enables high mobility transistors that can be optimizedindependently for p and n-channel use, solving the integrationdifficulties of incorporating n and p III-V transistors on the samesubstrate, and also the difficulty of integrating the III-V transistorswith conventional silicon transistors on the same substrate. Forexample, the first layer silicon transistors and metallization generallycannot be exposed to temperatures higher than 400° C. The III-Vcompounds, buffer layers, and dopings generally require processingtemperatures above that 400° C. threshold. By use of the pre deposited,doped, and annealed layer donor wafer formation and subsequent donor toacceptor wafer transfer techniques described above and illustrated inFIGS. 14, 20 to 29, and 43 to 45, III-V transistors and circuits may beconstructed on top of silicon transistors and circuits without damagingsaid underlying silicon transistors and circuits. As well, any stressmismatches between the dissimilar materials desired to be integrated,such as silicon and III-V compounds, may be mitigated by the oxidelayers, or specialized buffer layers, that are vertically in-between thedissimilar material layers. Additionally, this now enables theintegration of optoelectronic elements, communication, and data pathprocessing with conventional silicon logic and memory transistors andsilicon circuits. Another example of a material other than silicon thatthe independent formation of each transistor layer enables is Germanium.

It should be noted that this 3D technology could be used for manyapplications. As an example the various structures presented in FIGS. 15to 19 having been constructed in the ‘foundation’ could be just as wellbe ‘fabricated’ in the “Attic” using the techniques described inrelation to FIGS. 21 to 35.

It also should be noted that the 3D programmable system, where the logicfabric is sized by dicing a wafer of tiled array as illustrated in FIG.36, could utilize the ‘monolithic’ 3D techniques related to FIG. 14 inrespect to the ‘Foundation’, or to FIGS. 21 through 35 in respect to theAttic, to add 10 or memories as presented in FIG. 11. So while in manycases constructing a 3D programmable system using TSV could bepreferable there might be cases where it will be better to use the‘Foundation’ or ‘Attic”.

FIGS. 9A through 9C illustrates alternative configurations forthree-dimensional—3D integration of multiple dies constructing IC systemand utilizing Through Silicon Via. FIG. 9A illustrates an example inwhich the Through Silicon Via is continuing vertically through all thedies constructing a global cross-die connection. FIG. 9B provides anillustration of similar sized dies constructing a 3D system. 9B showsthat the Through Silicon Via 404 is at the same relative location in allthe dies constructing a standard interface.

FIG. 9C illustrates a 3D system with dies having different sizes. FIG.9C also illustrates the use of wire bonding from all three dies inconnecting the IC system to the outside.

FIG. 10A is a drawing illustration of a continuous array wafer of aprior art U.S. Pat. No. 7,337,425. The bubble 102 shows the repeatingtile of the continuous array, 104 are the horizontal and verticalpotential dicing lines. The tile 102 could be constructed as in FIG. 10B102-1 with potential dicing line 104-1 or as in FIG. 10C with SerDesQuad 106 as part of the tile 102-2 and potential dicing lines 104-2.

In general logic devices comprise varying quantities of logic elements,varying amounts of memories, and varying amounts of I/O. The continuousarray of the prior art allows defining various die sizes out of the samewafers and accordingly varying amounts of logic, but it is far moredifficult to vary the three-way ratio between logic, I/O, and memory. Inaddition, there exists different types of memories such as SRAM, DRAM,Flash, and others, and there exist different types of I/O such asSerDes. Some applications might need still other functions likeprocessor, DSP, analog functions, and others.

Embodiments of the current invention may enable a different approach.Instead of trying to put all of these different functions onto oneprogrammable die, which will require a large number of very expensivemask sets, it uses Through-Silicon Via to construct configurablesystems. The technology of “Package of integrated circuits and verticalintegration” has been described in U.S. Pat. No. 6,322,903 issued toOleg Siniaguine and Sergey Savastiouk on Nov. 27, 2001.

Accordingly embodiments of the current invention may suggest the use ofa continuous array of tiles focusing each one on a single, or very fewtypes of, function. Then, it constructs the end-system by integratingthe desired amount from each type of tiles, in a 3D IC system.

FIG. 11A is a drawing illustration of one reticle site on a wafercomprising tiles of programmable logic 1100A denoted FPGA. Such wafer isa continuous array of programmable logic. 1102 are potential dicinglines to support various die sizes and the amount of logic to beconstructed from one mask set. This die could be used as a base 1202A,1202B, 1202C or 1202D of the 3D system as in FIG. 12. In one alternativeof this invention these dies may carry mostly logic, and the desiredmemory and I/O may be provided on other dies, which may be connected bymeans of Through-Silicon Via. It should be noted that in some cases itwill be desired not to have metal lines, even if unused, in the dicingstreets 108. In such case, at least for the logic dies, one may usededicated masks to allow connection over the unused potential dicinglines to connect the individual tiles according to the desire die size.The actual dicing lines are also called streets.

It should be noted that in general the lithography over the wafer isdone by repeatedly projecting what is named reticle over the wafer in a“step-and-repeat” manner. In some cases it might be preferable toconsider differently the separation between repeating tile 102 within areticle image vs. tiles that relate to two projections. For simplicitythis description will use the term wafer but in some cases it will applyonly to tiles with one reticle.

The repeating tile 102 could be of various sizes. For FPGA applicationsit may be reasonable to assume tile 1101 to have an edge size between0.5 mm to 1 mm which allows good balance between the end-device size andacceptable relative area loss due to the unused potential dice lines1102.

There are many advantages for a uniform repeating tile structure of FIG.11A where a programmable device could be constructed by dicing the waferto the desired size of programmable device. Yet it is still helpful thatthe end-device act as a complete integrated device rather than just as acollection of individual tiles 1101. FIG. 36 illustrates a wafercarrying an array of tiles 3601 with potential dice lines 3602 to bediced along actual dice lines 3612 to construct an end-device 3611 of3×3 tiles.

FIG. 37 is a drawing illustration of an end-device 3611 comprising 9tiles 3701 such as 3601. Each tile 3701 contains a tiny micro controlunit—MCU 3702. The micro control unit could have a common architecturesuch as an 8051 with its own program memory and data memory. The MCUs ineach tile will be used to load the FPGA tile 3701 with its programmedfunction and all its required initialization for proper operation of thedevice. The MCU of each tile is connected so to be controlled by thetile west of it or the tile south of it, in that order of priority. So,for example, the MCU 3702-11 will be controlled by MCU 3702-01. The MCU3702-01 has no MCU west of it so it will be controlled by the MCU southof it 3702-00. Accordingly the MCU 3702-00 which is in south-west cornerhas no tile MCU to control it and it will therefore be the mastercontrol unit of the end-device.

FIG. 38 illustrates a simple control connectivity utilizing a slightlymodified Joint Test Action Group (JTAG)-based MCU architecture tosupport such a tiling approach. Each MCU has two Time-Delay-Integration(TDI) inputs, TDI 3816 from the device on its west side and TDIb 3814from the MCU on its south side. As long as the input from its west sideTDI 3816 is active it will be the controlling input, otherwise the TDIb3814 from the south side will be the controlling input. Again in thisillustration the Tile at the south-west corner 3800 will take control asthe master. Its control inputs 3802 would be used to control theend-device and through this MCU 3800 it will spread to all other tiles.In the structure illustrated in FIG. 38 the outputs of the end-device3611 are collected from the MCU of the tile at the north-east corner3820 at the TDO output 3822. These MCUs and their connectivity would beused to load the end-device functions, initialize it, test it, debug it,program its clocks, and all other desired control functions. Once theend-device has completed its set up or other control and initializationfunctions such as testing or debugging, these MCUs could be thenutilized for user functions as part of the end-device operation.

An additional advantage for this construction of a tiled FPGA array withMCUs is in the construction of an SoC with embedded FPGA function. Asingle tile 3601 could be connected to an SoC using Through SiliconVias—TSVs and accordingly provides a self-contained embedded FPGAfunction.

Clearly, the same scheme can be modified to use the East/North (or anyother combination of orthogonal directions) to encode effectively anidentical priority scheme.

FIG. 11B is a drawing illustration of an alternative reticle site on awafer comprising tiles of Structured ASIC 1100B. Such wafer may be, forexample, a continuous array of configurable logic. 1102 are potentialdicing lines to support various die sizes and the amount of logic to beconstructed. This die could be used as a base 1202A, 1202B, 1202C or1202D of the 3D system as in FIG. 12.

FIG. 11C is a drawing illustration of another reticle site on a wafercomprising tiles of RAM 1100C. Such wafer may be a continuous array ofmemories. The die diced out of such wafer may be a memory die componentof the 3D integrated system. It might include an antifuse layer or otherform of configuration technique to function as a configurable memorydie. Yet it might be constructed as a multiplicity of memories connectedby a multiplicity of Through-Silicon Vias to the configurable die, whichmay also be used to configure the raw memories of the memory die to thedesired function in the configurable system.

FIG. 11D is a drawing illustration of another reticle site on a wafercomprising tiles of DRAM 1100D. Such wafer may be a continuous array ofDRAM memories.

FIG. 11E is a drawing illustration of another reticle site on a wafercomprising tiles of microprocessor or microcontroller cores 1100E. Suchwafer may be a continuous array of Processors.

FIG. 11F is a drawing illustration of another reticle site on a wafercomprising tiles of I/Os 1100F. This could include groups of SerDes.Such a wafer may be a continuous tile of I/Os. The die diced out of suchwafer may be an I/O die component of a 3D integrated system. It couldinclude an antifuse layer or other form of configuration technique suchas SRAM to configure these I/Os of the configurable I/O die to theirfunction in the configurable system. Yet it might be constructed as amultiplicity of I/O connected by a multiplicity of Through-Silicon Viasto the configurable die, which may also be used to configure the rawIIOs of the I/O die to the desired function in the configurable system.

I/O circuits are a good example of where it could be advantageous toutilize an older generation process. Usually, the process drivers areSRAM and logic circuits. It often takes longer to develop the analogfunction associated with I/O circuits, SerDes circuits, PLLs, and otherlinear functions. Additionally, while there may be an advantage to usingsmaller transistors for the logic functionality, I/O may requirestronger drive and relatively larger transistors. Accordingly, using anolder process may be more cost effective, as the older process wafermight cost less while still performing effectively.

An additional function that it might be advantageous to pull out of theprogrammable logic die and onto one of the other dies in the 3D system,connected by Through-Silicon-Vias, may be the Clock circuits and theirassociated PLL, DLL, and control. Clock circuits and distribution. Thesecircuits may often be area consuming and may also be challenging in viewof noise generation. They also could in many cases be more effectivelyimplemented using an older process. The Clock tree and distributioncircuits could be included in the I/O die. Additionally the clock signalcould be transferred to the programmable die using theThrough-Silicon-Vias (TSVs) or by optical means. A technique to transferdata between dies by optical means was presented for example in U.S.Pat. No. 6,052,498 assigned to Intel Corp.

Alternatively an optical clock distribution could be used. There are newtechniques to build optical guides on silicon or other substrates. Anoptical clock distribution may be utilized to minimize the power usedfor clock signal distribution and would enable low skew and low noisefor the rest of the digital system. Having the optical clock constructedon a different die and than connected to the digital die by means ofThrough-Silicon-Vias or by optical means make it very practical, whencompared to the prior art of integrating optical clock distribution withlogic on the same die.

Alternatively the optical clock distribution guides and potentially someof the support electronics such as the conversion of the optical signalto electronic signal could be integrated by using layer transfer andsmart cut approaches as been described before in FIGS. 14 and 20. Theoptical clock distribution guides and potentially some of the supportelectronics could be first built on the ‘Foundation’ wafer 1402 and thena thin layer 1404 may be transferred on top of it using the ‘smart cut’flow, so all the following construction of the primary circuit wouldtake place afterward. The optical guide and its support electronicswould be able to withstand the high temperatures required for theprocessing of transistors on layer 1404.

And as related to FIG. 20, the optical guide, and the propersemiconductor structures on which at a later stage the supportelectronics would be processed, could be pre-built on layer 2019. Usingthe ‘smart cut’ flow it would be then transferred on top of a fullyprocessed wafer 808. The optical guide should be able to withstand theion implant 2008 required for the ‘smart cut’ while the supportelectronics would be finalized in flows similar to the ones presented inFIGS. 21 to 35, and 39 to 40. This means that the landing target for theclock signal will need to accommodate the ˜1 micron misalignment of thetransferred layer 2004 to the prefabricated-primary circuit and itsupper layer 808. Such misalignment could be acceptable for many designs.Alternatively only the base structure for the support electronics wouldbe pre-fabricated on layer 2019 and the optical guide will beconstructed after the layer transfer along with finalized flows of thesupport electronics using flows similar to the ones presented inrelating to FIGS. 21-35, and 39 to 40. Alternatively, the supportelectronics could be fabricated on top of a fully processed wafer 808 byusing flows similar to the ones presented in relating to FIGS. 21-35,and 39 to 40. Then an additional layer transfer on top of the supportelectronics would be utilized to construct the optical wave guides atlow temperature.

Having wafers dedicated to each of these functions may support highvolume generic product manufacturing. Then, similar to Lego® blocks,many different configurable systems could be constructed with variousamounts of logic memory and I/O. In addition to the alternativespresented in FIG. 11A through 11F there many other useful functions thatcould be built and that could be incorporated into the 3D ConfigurableSystem. Examples of such may be image sensors, analog, data acquisitionfunctions, photovoltaic devices, non-volatile memory, and so forth.

An additional function that would fit well for 3D systems using TSVs, asdescribed, is a power control function. In many cases it is desired toshut down power at times to a portion of the IC that is not currentlyoperational. Using controlled power distribution by an external dieconnected by TSVs is advantageous as the power supply voltage to thisexternal die could be higher because it is using an older process.Having a higher supply voltage allows easier and better control of powerdistribution to the controlled die.

Those components of configurable systems could be built by one vendor,or by multiple vendors, who agree on a standard physical interface toallow mix-and-match of various dies from various vendors.

The construction of the 3D Programmable System could be done for thegeneral market use or custom-tailored for a specific customer.

Another advantage of some embodiments of this invention may be anability to mix and match various processes. It might be advantageous touse memory from a leading edge process, while the I/O, and maybe ananalog function die, could be used from an older process of maturetechnology (e.g., as discussed above).

FIGS. 12A through 12E illustrates integrated circuit systems. Anintegrated circuit system that comprises configurable die could becalled a Configurable System. FIG. 12A through 12E are drawingsillustrating integrated circuit systems or Configurable Systems withvarious options of die sizes within the 3D system and alignments of thevarious dies. FIG. 12E presents a 3D structure with some lateraloptions. In such case a few dies 1204E, 1206E, 1208E are placed on thesame underlying die 1202E allowing relatively smaller die to be placedon the same mother die. For example die 1204E could be a SerDes diewhile die 1206E could be an analog data acquisition die. It could beadvantageous to fabricate these die on different wafers using differentprocess and than integrate them in one system. When the dies arerelatively small then it might be useful to place them side by side(such as FIG. 12E) instead of one on top of the other (FIGS. 12A-D).

The Through Silicon Via technology is constantly evolving. In the earlygenerations such via would be 10 microns in diameter. Advanced work isnow demonstrating Through Silicon Via with less than a 1-microndiameter. Yet, the density of connections horizontally within the diemay typically still be far denser than the vertical connection usingThrough Silicon Via.

In another alternative of the present invention the logic portion couldbe broken up into multiple dies, which may be of the same size, to beintegrated to a 3D configurable system. Similarly it could beadvantageous to divide the memory into multiple dies, and so forth, withother function.

Recent work on 3D integration shows effective ways to bond waferstogether and then dice those bonded wafers. This kind of assembly maylead to die structures like FIG. 12A or FIG. 12D. Alternatively for some3D assembly techniques it may be better to have dies of different sizes.Furthermore, breaking the logic function into multiple verticallyintegrated dies may be used to reduce the average length of some of theheavily loaded wires such as clock signals and data buses, which may, inturn, improve performance.

FIG. 13 is a flow-chart illustration for 3D logic partitioning. Thepartitioning of a logic design to two or more vertically connected diespresents a different challenge for a Place and Route—P&R—tool. Thecommon layout flow starts with planning the placement followed byrouting. But the design of the logic of vertically connected dies maygive priority to the much-reduced frequency of connections between diesand may create a need for a special design flow. In fact, a 3D systemmight merit planning some of the routing first as presented in the flowsof FIG. 13.

The flow chart of FIG. 13 uses the following terms:

-   -   M—The number of TSVs available for logic;    -   N(n)—The number of nodes connected to net n;    -   S(n)—The median slack of net n;    -   MinCut—a known algorithm to partition logic design (net-list) to        two pieces about equal in size with a minimum number of        nets (MC) connecting the pieces;    -   MC—number of nets connecting the two partitions;    -   K1, K2—Two parameters selected by the designer.

One idea of the proposed flow of FIG. 13 is to construct a list of netsin the logic design that connect more than K1 nodes and less than K2nodes. K1 and K2 are parameters that could be selected by the designerand could be modified in an iterative process. K1 should be high enoughso to limit the number of nets put into the list. The flow's objectiveis to assign the TSVs to the nets that have tight timingconstraints-critical nets. And also have many nodes whereby having theability to spread the placement on multiple die help to reduce theoverall physical length to meet the timing constraints. The number ofnets in the list should be close but smaller than the number of TSVs.Accordingly K1 should be set high enough to achieve this objective. K2is the upper boundary for nets with the number of nodes N(n) that wouldjustify special treatment.

Critical nets may be identified usually by using static timing analysisof the design to identify the critical paths and the available “slack”time on these paths, and pass the constraints for these paths to thefloor planning, layout, and routing tools so that the final design isnot degraded beyond the requirement.

Once the list is constructed it is priority-ordered according toincreasing slack, or the median slack, S(n), of the nets. Then, using apartitioning algorithm, such as, but not limited to, MinCut, the designmay be split into two parts, with the highest priority nets split aboutequally between the two parts. The objective is to give the nets thathave tight slack a better chance to be placed close enough to meet thetiming challenge. Those nets that have higher than K1 nodes tend to getspread over a larger area, and by spreading into three dimensions we geta better chance to meet the timing challenge.

The Flow of FIG. 13 suggests an iterative process of allocating the TSVsto those nets that have many nodes and are with the tightest timingchallenge, or smallest slack.

Clearly the same Flow could be adjusted to three-way partition or anyother number according to the number of dies the logic will be spreadon.

Constructing a 3D Configurable System comprising antifuse based logicalso provides features that may implement yield enhancement throughutilizing redundancies. This may be even more convenient in a 3Dstructure of embodiments of the current invention because the memoriesmay not be sprinkled between the logic but may rather be concentrated inthe memory die, which may be vertically connected to the logic die.Constructing redundancy in the memory, and the proper self-repair flow,may have a smaller effect on the logic and system performance.

The potential dicing streets of the continuous array of this inventionrepresent some loss of silicon area. The narrower the street the lowerthe loss is, and therefore, it may be advantageous to use advanceddicing techniques that can create and work with narrow streets.

An additional advantage of the 3D Configurable System of variousembodiments of this invention may be a reduction in testing cost. Thisis the result of building a unique system by using standard ‘Lego®’blocks. Testing standard blocks could reduce the cost of testing byusing standard probe cards and standard test programs.

The disclosure presents two forms of 3D IC system, first by using TSVand second by using the method which we call ‘Attic’ described in FIGS.21 to 35 and 39 to 40. Those two methods could even work together as adevices could have multiple layers of crystallized silicon producedusing layer transfer and the techniques we call ‘Foundation’ and ‘Attic’and then connected together using TSV. The most significant differenceis that prior TSVs are associated with a relatively large misalignment(˜1 micron) and limited connections (TSV) per mm sq. of ˜10,000 for aconnected fully fabricated device while the disclosed ‘smart-cut’-layertransferred techniques allow 3D structures with a very smallmisalignment (<10 nm) and high connection (vias) per mm sq. of˜100,000,000 and are produced in an integrated fabrication flow. Anadvantage of 3D using TSV is the ability to test each device beforeintegrating it and utilize the Known Good Die (KGD) in the 3D stack orsystem. This is very helpful to provide good yield and reasonable costsof the 3D Integrated System.

An additional alternative of the invention is a method to allowredundancy so that the highly integrated 3D systems using the layertransfer technique could be produced with good yield. For the purpose ofillustrating this redundancy invention we will use the programmable tilearray presented in FIGS. 11A, 36-38.

FIG. 41 is a drawing illustration of a 3D IC system with redundancy. Itillustrates a 3D IC programmable system comprising: first programmablelayer 4100 of 3×3 tiles 4102, overlaid by second programmable layer 4110of 3×3 tiles 4112, overlaid by third programmable layer 4120 of 3×3tiles 4122. Between a tile and its neighbor tile in the layer there aremany programmable connections 4104. The programmable element 4106 couldbe antifuse, pass transistor controlled driver, floating gate flashtransistor, or similar electrically programmable element. Each intertile connection 4104 has a branch out programmable connection 4105connected to inter layer vertical connection 4140. The end product isdesigned so that at least one layer such as 4110 is left for redundancy.

When the end product programmable system is being programmed for the endapplication each tile will run its own Built-in Test using its own MCU.A tile that is detected to have a defect will be replaced by the tile inthe redundancy layer 4110. The replacement will be done by the tile thatis at the same location but in the redundancy layer and therefore itshould have an acceptable impact on the overall product functionalityand performance. For example, if tile (1,0,0) has a defect then tile(1,0,1) will be programmed to have exactly the same function and willreplace tile (1,0,0) by properly setting the inter tile programmableconnections. Therefore, if defective tile (1,0,0) was supposed to beconnected to tile (2,0,0) by connection 4104 with programmable element4106, then programmable element 4106 would be turned off andprogrammable elements 4116, 4117, 4107 will be turned on instead. Asimilar multilayer connection structure should be used for anyconnection in or out of a repeating tile. So if the tile has a defectthe redundant tile of the redundant layer would be programmed to thedefected tile functionality and the multilayer inter tile structurewould be activated to disconnect the faulty tile and connect theredundant tile. The inter layer vertical connection 4140 could be alsoused when tile (2,0,0) is defective to insert tile (2,0,1), of theredundant layer, instead. In such case (2,0,1) will be programmed tohave exactly the same function as tile (2,0,0), programmable element4108 will be turned off and programmable elements 4118, 4117, 4107 willbe turned on instead.

It should be stated again that the invention could be applied to manyapplications other than programmable logic such a Graphics Processorwhich may comprise many repeating processing units.

An additional variation of the programmable 3D system may comprise atiled array of programmable logic tiles connected with I/O structuresthat are pre fabricated on the base wafer 1402 of FIG. 14.

In yet an additional variation, the programmable 3D system may comprisea tiled array of programmable logic tiles connected with I/O structuresthat are pre-fabricated on top of the finished base wafer 1402 by usingany of the techniques presented in conjunction to FIGS. 21-35 or FIGS.39-40. In fact any of the alternative structures presented in FIG. 11may be fabricated on top of each other by the 3D techniques presented inconjunction with FIGS. 21-35 or FIGS. 39-40. Accordingly many variationsof 3D programmable systems may be constructed with a limited set ofmasks by mixing different structures to form various 3D programmablesystems by varying the amount and 3D position of logic and type of I/Osand type of memories and so forth.

Additional flexibility and reuse of masks may be achieved by utilizingonly a portion of the full reticle exposure. Modern steppers allowcovering portions of the reticle and hence projecting only a portion ofthe reticle. Accordingly a portion of a mask set may be used for onefunction while another portion of that same mask set would be used foranother function. For example, let the structure of FIG. 37 representthe logic portion of the end device of a 3D programmable system. On topof that 3×3 programmable tile structure I/O structures could be builtutilizing process techniques according to FIGS. 21-35 or FIGS. 39-40.There may be a set of masks where various portions provide for theoverlay of different I/O structures; for example, one portion comprisingsimple I/Os, and another of Serializer/Deserializer (Ser/Des) I/Os. Eachset is designed to provide tiles of I/O that perfectly overlay theprogrammable logic tiles. Then out of these two portions on one maskset, multiple variations of end systems could be produced, including onewith all nine tiles as simple I/Os, another with SerDes overlaying tile(0,0) while simple I/Os are overlaying the other eight tiles, anotherwith SerDes overlaying tiles (0,0), (0,1) and (0,2) while simple I/Osare overlaying the other 6 tiles, and so forth. In fact, if properlydesigned, multiples of layers could be fabricated one on top of theother offering a large variety of end products from a limited set ofmasks.

In yet an additional alternative of the current invention, the 3Dantifuse Configurable System, may also comprise a Programming Die. Insome cases of FPGA products, and primarily in antifuse-based products,there is an external apparatus that may be used for the programming thedevice. In many cases it is a user convenience to integrate thisprogramming function into the FPGA device. This may result in asignificant die overhead as the programming process requires highervoltages as well as control logic. The programmer function could bedesigned into a dedicated Programming Die. Such a Programmer Die couldcomprise the charge pump, to generate the higher programming voltage,and a controller with the associated programming to program the antifuseconfigurable dies within the 3D Configurable circuits, and theprogramming check circuits. The Programming Die might be fabricatedusing a lower cost older semiconductor process. An additional advantageof this 3D architecture of the Configurable System may be a high volumecost reduction option wherein the antifuse layer may be replaced with acustom layer and, therefore, the Programming Die could be removed fromthe 3D system for a more cost effective high volume production.

It will be appreciated by persons skilled in the art, that the presentinvention is using the term antifuse as it is the common name in theindustry, but it also refers in this invention to any micro element thatfunctions like a switch, meaning a micro element that initially hashighly resistive-OFF state, and electronically it could be made toswitch to a very low resistance—ON state. It could also correspond to adevice to switch ON-OFF multiple times—a re-programmable switch. As anexample there are new innovations, such as the electro-staticallyactuated Metal-Droplet micro-switch, that may be compatible forintegration onto CMOS chips.

It will be appreciated by persons skilled in the art that the presentinvention is not limited to antifuse configurable logic and it will beapplicable to other non-volatile configurable logic. A good example forsuch is the Flash based configurable logic. Flash programming may alsorequire higher voltages, and having the programming transistors and theprogramming circuits in the base diffusion layer may reduce the overalldensity of the base diffusion layer. Using various embodiments of thecurrent invention may be useful and could allow a higher device density.It is therefore suggested to build the programming transistors and theprogramming circuits, not as part of the diffusion layer, but accordingto one or more embodiments of the present invention. In high volumeproduction one or more custom masks could be used to replace thefunction of the Flash programming and accordingly save the need to addon the programming transistors and the programming circuits.

Unlike metal-to-metal antifuses that could be placed as part of themetal interconnection, Flash circuits need to be fabricated in the basediffusion layers. As such it might be less efficient to have theprogramming transistor in a layer far above. An alternative embodimentof the current invention is to use Through-Silicon-Via 816 to connectthe configurable logic device and its Flash devices to an underlyingstructure 804 comprising the programming transistors.

It will also be appreciated by persons skilled in the art, that thepresent invention is not limited to what has been particularly shown anddescribed hereinabove. Rather, the scope of the present inventionincludes both combinations and sub-combinations of the various featuresdescribed hereinabove as well as modifications and variations whichwould occur to persons skilled in the art upon reading the foregoingdescription and which are not in the prior art.

I clam:
 1. A configurable integrated circuit (IC) system comprising: afirst die comprising input/output cells; and a Field Programmable GatedArray (FPGA) second die substantially vertically connected by a firstplurality of through-silicon-vias (TSVs) to the first die, wherein saidFPGA second die comprises a plurality of unused predetermined dicelines, wherein said FPGA second die comprises at least two micro controlunits (MCUs), and at least one permanent connection to electricallyinterconnect said micro control units.
 2. A configurable IC systemaccording to claim 1, wherein said first die is fabricated by a processolder than said FPGA second die.
 3. A configurable IC system accordingto claim 1, further comprising: a third die connected to at least one ofsaid first die or said FPGA second die by a second plurality of throughsilicon-vias (TSVs).
 4. A configurable IC system according to claim 1,wherein said first die further comprises serializer/deserializer(SerDes) circuits.
 5. A configurable IC system according to claim 1,wherein said FPGA second die comprises: a plurality of configurablelogic cells, and between one and two metal layers interconnecting saidconfigurable logic cells across said unused predetermined dice lines. 6.A configurable IC system comprising: a first die comprising input/outputcells; and a Field Programmable Gated Array (FPGA) second die connectedby a first plurality of through-silicon-vias (TSV) to the first die;wherein said FPGA second die comprises at least two micro control units(MCUs), and said FPGA second die further comprises at least onepermanent connection to electrically interconnect said micro controlunits.
 7. A configurable IC system according to claim 6, wherein saidFPGA second die comprises a plurality of unused predetermined dicelines.
 8. A configurable IC system according to claim 6, wherein saidfirst die is fabricated in a process older than said FPGA second die. 9.A configurable IC system according to claim 6 wherein said FPGA seconddie further comprises a plurality of memory circuits.
 10. A configurableIC system according to claim 6, wherein said first die further comprisesserializer/deserializer (SerDes) circuits.
 11. A configurable IC systemaccording to claim 7, wherein said FPGA second die comprises a pluralityof configurable logic cells and between one and two metal layersinterconnecting said configurable logic cells across said unusedpredetermined dice lines.
 12. The configurable IC system according toclaim 6, wherein said permanent connection is made before said FPGAsecond die is connected to said first die by said first plurality ofTSVs.
 13. The configurable IC system according to claim 1, wherein saidplurality of unused predetermined dice lines allow FPGA dies of multipledie sizes to be constructed based on the same mask set.